IPF06N03LA G

Single FETs, MOSFETs Overview

IPF06N03LA G is an OptiMOS®2 N-channel power transistor in a PG-TO252-3-23 surface-mount package. It features a drain-source voltage of 25 V and a continuous drain current of 50 A at 25 °C case temperature. The maximum on-state resistance is 5.7 mΩ at VGS=10 V and 9.4 mΩ at VGS=4.5 V. Total gate charge is typically 17 nC, with avalanche energy rated at 225 mJ. Thermal resistance from junction to case is 1.8 K/W, supporting operation up to 175 °C.

Single FETs, MOSFETs Feature Summary

• Logic-level gate threshold enabling direct drive from standard logic voltages
• Optimized figure-of-merit combining low gate charge and on-resistance for high-frequency efficiency
• Robust avalanche capability with single-pulse energy rating of 225 mJ
• Qualified according to JEDEC standards for target automotive and industrial applications

Single FETs, MOSFETs Applications

• High-frequency DC/DC converters
• Synchronous rectification in power supplies
• Automotive electronic control units
• Industrial motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' indicates lead-free plating and RoHS compliance as per Infineon documentation. Confirm the PG-TO252-3-23 package outline matches your PCB footprint requirements. Check current lifecycle status, as this component may be subject to obsolescence or replacement by newer OptiMOS generations.

Single FETs, MOSFETs Selection Notes

Select based on the required 25 V breakdown and 50 A current handling capacity. Ensure the thermal design accommodates the 1.8 K/W junction-to-case resistance. Verify that the logic-level gate threshold supports the available drive voltage for optimal RDS(on) performance. Consider the total gate charge for switching speed requirements in the target application.

Single FETs, MOSFETs Part Context

The IPF06N03LA G belongs to Infineon's OptiMOS®2 family, designed for low-voltage, high-current applications. It shares core electrical characteristics with the IPD06N03LA G but utilizes the PG-TO252-3-23 package variant. This series emphasizes low conduction losses and fast switching for efficient power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements within the same package include IPD06N03LA G. Newer generations such as OptiMOS™ 3 or 5 variants may offer improved figures of merit but require verification of package compatibility and parameter alignment.