Single FETs, MOSFETs IPN50R950CEATMA1 product image

IPN50R950CEATMA1

$0.52
  • Description:MOSFET N-CH 500V 6.6A SOT223
  • Series:CoolMOS™ CE
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:1cce3d032dc1 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

IPN50R950CEATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 500V 6.6A SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPN50R950CEATMA1

  • Description:MOSFET N-CH 500V 6.6A SOT223
  • Series:CoolMOS™ CE
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:6.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):13V
  • Rds On (Max) @ Id, Vgs:950mOhm @ 1.2A, 13V
  • Vgs(th) (Max) @ Id:3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:231 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):5W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT223
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for IPN50R950CEATMA1

IPN50R950CEATMA1

Single FETs, MOSFETs Overview

The IPN50R950CEATMA1 is a 500V N-channel enhancement-mode MOSFET from the CoolMOS CE series, utilizing superjunction technology. It features a PG-SOT223 package with a maximum drain-source voltage of 550V and a continuous drain current of 6.6A at 25°C. The device has a typical gate charge of 10.5nC and a maximum on-state resistance of 0.95Ω. It supports a pulsed drain current of 12.8A and operates within a temperature range of -40°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Superjunction structure for low losses
  • High commutation ruggedness
  • Lead-free plating and halogen-free compound

Single FETs, MOSFETs Applications

  • Adapters
  • Chargers
  • Lighting

Single FETs, MOSFETs Procurement Notes

Verify the component against official Infineon datasheets to confirm electrical parameters and package dimensions. Ensure compatibility with standard grade applications as specified in the documentation. Check for any specific handling requirements related to moisture sensitivity level 3 before assembly.

Single FETs, MOSFETs Selection Notes

Select this component for cost-sensitive consumer and lighting applications requiring high efficiency. Consider the thermal resistance characteristics when designing heat dissipation solutions. Evaluate the gate charge and switching times for driving circuit compatibility.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS CE family, optimized for price-performance in consumer electronics. It offers fast switching capabilities while maintaining ease of use. The series targets applications demanding high efficiency without compromising on cost-effectiveness.

Single FETs, MOSFETs Replacement Considerations

IPN50R950CEAUMA1

Single FETs, MOSFETs FAQ

What is the avalanche energy rating?

The single pulse avalanche energy (EAS) is rated at 68 mJ under test conditions of ID = 1.6A and VDD = 50V.

How does the reverse diode perform?

The reverse diode has a forward voltage of 0.83V at 1.6A and a reverse recovery time of 140ns at VR=400V.

IPN50R950CEATMA1IPN50R950CEATMA1
$0.52
Buy Now

Recent News