IPP26CNE8N G

Single FETs, MOSFETs Overview

The IPP26CNE8N G is an N-channel OptiMOS™ 2 power transistor in a PG-TO220-3 package. It features a maximum drain-source voltage of 85 V and a continuous drain current of 35 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 26 mΩ at VGS=10 V and ID=35 A. Key electrical parameters include a gate threshold voltage range of 2 V to 4 V, total gate charge of 31 nC (max), and single-pulse avalanche energy of 65 mJ. Thermal resistance from junction to case is 2.1 K/W, with operation supported up to 175 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for high-frequency switching and synchronous rectification applications
• Features excellent gate charge and on-resistance product factor
• Supports 175 °C operating temperature with Pb-free lead plating
• Compliant with RoHS standards and halogen-free according to IEC61249-2-21

Single FETs, MOSFETs Applications

• High-frequency switching circuits
• Synchronous rectification modules
• Power supply designs requiring robust thermal performance

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against official Infineon documentation to ensure correct package variant selection. Confirm that the component meets all required environmental compliance standards for the intended deployment. Cross-reference datasheet revision numbers to validate parameter accuracy before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring an 85 V N-channel MOSFET with low conduction losses. Evaluate the thermal management requirements based on the specified junction-to-case resistance. Ensure the drive circuitry can provide sufficient gate voltage to achieve the optimal on-state resistance characteristics defined in the electrical data.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 2 family of power transistors manufactured by Infineon Technologies. It shares common technological foundations with other variants in the series, such as IPB26CNE8N G and IPI26CNE8N G, differentiated primarily by their physical package configurations like PG-TO220-3 or PG-TO263-3.

Single FETs, MOSFETs Replacement Considerations

Compatible substitutes within the same family include IPB26CNE8N G, IPI26CNE8N G, and IPD25CNE8N G. Verify pinout compatibility and thermal resistance values when substituting between different package types to maintain system integrity.