IPP60R099C6XKSA1

$5.27

Description：MOSFET N-CH 600V 37.9A TO220-3
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tube

SKU:50e47000752d Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPP60R099C6XKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 37.9A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPP60R099C6XKSA1

Description：MOSFET N-CH 600V 37.9A TO220-3
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：99mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id：3.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs：119 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2660 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：278W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IPP60R099C6XKSA1

IPP60R099C6XKSA1

Single FETs, MOSFETs Overview

The IPP60R099C6XKSA1 is a single N-channel CoolMOS C6 power MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 37.9 A. Its maximum on-resistance (Rds(on)) is 90 mOhms, with a gate charge (Qg) of 119 nC. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 278 W.

Single FETs, MOSFETs Feature Summary

Utilizes CoolMOS C6 technology for optimized switching performance
Designed for high-voltage applications with robust thermal stability
Single enhancement-mode N-channel configuration

Single FETs, MOSFETs Applications

High-frequency power supplies
Industrial motor drives
Uninterruptible power systems

Single FETs, MOSFETs Procurement Notes

Verify the component status as Not Recommended for New Designs (NRND). Confirm that the TO-220-3 package and specific electrical parameters match the design requirements before procurement. Ensure compatibility with existing thermal management solutions due to the specified power dissipation limits.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V rated N-channel MOSFET with low on-resistance is required for through-hole assembly. Consider the 119 nC gate charge for driver capability assessment. Evaluate the thermal resistance characteristics against the 278 W dissipation rating for the intended application environment.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS C6 series from Infineon Technologies. It represents a generation of superjunction MOSFETs designed to reduce conduction and switching losses compared to previous generations. The TO-220-3 package provides a balance between power handling and ease of mounting for general-purpose industrial electronics.