IPU80R1K4CEAKMA1

Single FETs, MOSFETs Overview

The IPU80R1K4CEAKMA1 is a single N-channel CoolMOS CE power MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a PG-TO251-3 (TO-251-3) through-hole package. The device features an 800 V drain-source breakdown voltage and a continuous drain current of 3.9 A at case temperature. Its maximum on-state resistance is 1.4 Ohms at 10 V gate drive. The component operates within a junction temperature range of -55 °C to +150 °C with a power dissipation rating of 63 W.

Single FETs, MOSFETs Feature Summary

• Integrates CoolMOS CE technology for optimized performance in high-voltage switching applications.
• Designed for robust operation with enhanced avalanche ruggedness characteristics.
• Utilizes a TO-251-3 through-hole package suitable for reliable thermal management.

Single FETs, MOSFETs Applications

• High-frequency switched-mode power supplies
• Industrial motor control systems
• Uninterruptible power supply units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix AKMA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure the ordering part number matches the required tape-and-reel or tube configuration. Cross-reference the datasheet revision date to validate electrical parameters before integration into design specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 800 V blocking capability with moderate current handling. The 1.4 Ohm on-resistance offers a balance between conduction losses and cost. Confirm that the TO-251-3 footprint aligns with the PCB layout constraints and that the thermal resistance values meet the system's heat dissipation requirements under expected operating conditions.

Single FETs, MOSFETs Part Context

This device belongs to the CoolMOS CE series, representing a generation of superjunction MOSFETs designed for efficiency improvements over standard planar technologies. The IPU prefix indicates a specific package variant within Infineon's discrete power transistor portfolio, targeting general-purpose high-voltage switching needs in industrial and consumer electronics markets.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for direct replacements. Verify pinout compatibility and thermal characteristics when substituting with other 800 V TO-251-3 MOSFETs from different manufacturers.