IR25600PBF

Gate Driver Overview

The IR25600PBF is a dual low-side gate driver designed for driving power MOSFETs and IGBTs. It features proprietary latch-immune CMOS technology for ruggedized monolithic construction. The device operates with a supply voltage range of 6 V to 20 V. It provides peak output currents of 2.3 A source and 3.3 A sink. The typical propagation delay is 85 ns. It is housed in an 8-pin PDIP package suitable for through-hole installation.

Gate Driver Feature Summary

• Proprietary latch-immune CMOS technology ensures robust operation
• Dual non-inverting outputs for independent control
• Designed for direct interface with standard logic gates

Gate Driver Applications

• Power MOSFET switching circuits
• IGBT gate drive applications
• Industrial motor control systems

Gate Driver Procurement Notes

Verify the specific suffix 'PBF' confirms lead-free compliance and PDIP packaging configuration. Ensure the application circuit supports the 6 V to 20 V operating range. Confirm thermal requirements align with the through-hole package dissipation capabilities before finalizing procurement specifications.

Gate Driver Selection Notes

Select this component when a dual low-side topology is required for synchronous rectification or half-bridge configurations. The high peak current capability supports fast switching transitions. Consider the PDIP package constraints for PCB layout and thermal management compared to surface-mount alternatives.

Gate Driver Part Context

This part belongs to the IR2560 family of low-voltage gate drivers. It serves as a discrete solution for controlling power switches in medium-power applications. The design emphasizes noise immunity and reliability for industrial environments.

Gate Driver Replacement Considerations

The IR25600SPBF offers identical electrical performance in an SOIC-8 surface-mount package. Verify pinout compatibility and thermal characteristics when transitioning between PDIP and SOIC packages.