IRF1018ESPBF

Description：MOSFET N-CH 60V 79A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:aeb7dfa37911 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRF1018ESPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 79A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF1018ESPBF

Description：MOSFET N-CH 60V 79A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id：4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：69 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2290 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF1018ESPBF

IRF1018ESPBF

Single FETs, MOSFETs Overview

The IRF1018ESPbF is a HEXFET power MOSFET manufactured by Infineon Technologies, housed in a TO-220AB package. It features an N-channel silicon construction with a drain-source breakdown voltage of 60V and a continuous drain current rating of 79A at 25°C case temperature. The device exhibits a maximum on-resistance of 8.4mΩ and a typical gate charge of 46nC. It supports a junction temperature range from -55°C to +175°C with a maximum power dissipation of 110W.

Single FETs, MOSFETs Feature Summary

Enhanced body diode dV/dt and dI/dt capability for improved switching performance
Fully characterized capacitance and avalanche safe operating area (SOA)
Improved gate, avalanche, and dynamic dv/dt ruggedness

Single FETs, MOSFETs Applications

High efficiency synchronous rectification in switch-mode power supplies
Uninterruptible power supply systems
High speed power switching circuits
Hard switched and high frequency applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'PbF' indicates lead-free compliance when sourcing replacements. Confirm the TO-220AB package type matches your thermal management requirements. Ensure the manufacturer is identified as Infineon Technologies or its predecessor International Rectifier for accurate datasheet alignment. Check for any RoHS directive updates relevant to your region.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust avalanche energy handling and low conduction losses. The 60V rating suits low-voltage DC-DC converters and motor control interfaces. Evaluate the thermal resistance characteristics against your heatsinking strategy. Consider the gate charge specifications for driving circuit compatibility in high-frequency environments.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, known for high reliability and ruggedness. The IRF1018 series represents a standard voltage class optimized for general-purpose power switching. The ESPbF designation specifically denotes the through-hole TO-220AB packaging variant within this product line.