Single FETs, MOSFETs IRF3711ZSTRL product image

IRF3711ZSTRL

$1.16
  • Description:MOSFET N-CH 20V 92A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:e3f227fb6095 Category: Brand:

  
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IRF3711ZSTRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 92A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF3711ZSTRL

  • Description:MOSFET N-CH 20V 92A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:92A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:24 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2150 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):79W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF3711ZSTRL

IRF3711ZSTRL

Single FETs, MOSFETs Overview

The IRF3711ZSTRL is a single N-channel power MOSFET manufactured by Infineon Technologies, utilizing OptiMOS technology. It features a drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 92 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 6 mΩ at 10 V gate drive. Key electrical parameters include a typical gate charge (Qg) of 16 nC at 4.5 V, a threshold voltage range of 2 V to 4 V, and a thermal resistance junction-to-case (RthJC) of 0.92 K/W. It supports a maximum junction temperature of 175 °C and is housed in a TO-263AB (D2PAK) surface-mount package.

Single FETs, MOSFETs Feature Summary

  • OptiMOS technology integration for optimized switching performance
  • Low gate charge characteristics facilitating efficient driver requirements
  • High thermal conductivity via D2PAK package design

Single FETs, MOSFETs Applications

  • Synchronous rectification in DC/DC converters
  • Power management circuits requiring low voltage operation
  • Motor control applications with high current demands

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix 'STRL' corresponds to the required tape-and-reel packaging format. Ensure compliance with RoHS directives as indicated in public documentation. Validate that the lead-free status meets project environmental standards before final procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 20 V rating and high current capacity are required in a surface-mount form factor. The low Rds(on) minimizes conduction losses in high-current paths. Consider the TO-263 package for its thermal dissipation capabilities relative to smaller SMD options. Verify gate drive compatibility with the specified threshold voltage range for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the IRF3711 family of N-channel power MOSFETs from Infineon. It shares core specifications with variants like IRFR3711ZTRLPBF but differs in packaging, utilizing the larger D2PAK footprint instead of DPAK. This family targets low-voltage, high-current applications where thermal management and low on-resistance are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Evaluate cross-reference tools for potential alternatives based on matching Vds, Id, and Rds(on) specifications if direct replacement is necessary.

IRF3711ZSTRLIRF3711ZSTRL
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