IRF520PBF

$1.04

Description：MOSFET N-CH 100V 9.2A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:fe07dd6a9a54 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF520PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 9.2A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF520PBF

Description：MOSFET N-CH 100V 9.2A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：270mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：60W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRF520PBF

IRF520PBF

Single FETs, MOSFETs Overview

The IRF520PBF is a single N-channel enhancement mode MOSFET manufactured by Vishay Semiconductors. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source breakdown voltage of 100 V and supports a continuous drain current of 9.2 A. Its on-resistance is specified at 270 mOhms, with a gate-source voltage range of ±20 V and a threshold voltage of 4 V. The component operates within a temperature range of -55 °C to +175 °C junction temperature, dissipating up to 60 W of power.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode operation for switching applications
Through-hole mounting via TO-220-3 package
High thermal stability supporting extended temperature ranges

Single FETs, MOSFETs Applications

Power switching circuits
DC-DC converter implementations
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer marking matches Vishay Semiconductors specifications. Confirm the package type is TO-220-3 and the pinout aligns with standard N-channel MOSFET configurations. Ensure compliance with RoHS directives if required by the design specification. Cross-reference datasheet parameters against actual received components to validate electrical characteristics before integration into production assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with moderate voltage ratings and high current capacity is required. The TO-220-3 package facilitates effective heat dissipation for through-hole designs. Consider the 270 mOhm on-resistance for efficiency calculations in low-to-medium power applications. Verify that the 100 V rating meets the circuit's maximum operating voltage requirements.

Single FETs, MOSFETs Part Context

This part belongs to the IRF series of power MOSFETs from Vishay Siliconix. The series is known for providing reliable performance in various power management applications. The IRF520PBF specifically addresses needs for medium-power switching where through-hole mounting is preferred over surface-mount alternatives.