IRF5210STRLPBF

Single FETs, MOSFETs Overview

The IRF5210STRLPBF is a P-channel power MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features an ultra-low on-resistance of 60 mΩ at VGS = -10V and ID = -38A. The device supports a continuous drain current of 38A at TC = 25°C and handles a pulsed drain current of 140A. It operates with a maximum drain-source voltage of 100V and a gate-source voltage limit of ±20V. Total gate charge is typically 150 nC (max 230 nC) at VGS = 10V. Thermal resistance junction-to-case is 0.75 °C/W max. Power dissipation reaches 170W at TC = 25°C. The component is housed in a D2PAK (TO-263) surface-mount package.

Single FETs, MOSFETs Feature Summary

• Advanced process technology enabling ultra-low on-resistance for improved system efficiency
• Fast switching characteristics combined with high dv/dt capability
• Repetitive avalanche rating allowed up to maximum junction temperature
• Designed for robust performance with a 150°C operating junction temperature

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control circuits
• Power management systems
• Load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'STR' confirms tape-and-reel packaging when sourcing. Confirm lead-free status and RoHS compliance through official manufacturer documentation or certified distributor declarations. Ensure the part number matches the exact HEXFET specification sheet to avoid confusion with similar legacy variants that may have different electrical parameters.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring efficient P-channel switching with moderate voltage ratings. Evaluate thermal management requirements based on the specified junction-to-case resistance. Consider the gate charge specifications for driver compatibility. Verify that the required continuous and pulsed current capabilities align with the circuit's operational demands under expected ambient temperatures.

Single FETs, MOSFETs Part Context

This device belongs to the Infineon HEXFET family of power MOSFETs. The HEXFET line utilizes advanced planar trench technology to deliver low on-resistance and fast switching speeds. The IRF5210 variant specifically addresses industrial applications needing reliable P-channel solutions in surface-mount packages.

Single FETs, MOSFETs Replacement Considerations

Consult official datasheets for direct pin-compatible substitutes within the same voltage and current class. Verify that any alternative part meets the specific 60 mΩ on-resistance and 100V breakdown requirements.