IRF6665TRPBF

Single FETs, MOSFETs Overview

The IRF6665TRPBF is a single N-channel Digital Audio MOSFET designed for Class-D audio amplifier applications. It utilizes DirectFET packaging technology to achieve low on-resistance per silicon area, optimized gate charge, and minimized body-diode reverse recovery characteristics. The device features a drain-to-source voltage rating of 100 V and a continuous drain current of 4.2 A at 25°C case temperature. Key electrical parameters include a typical static drain-to-source on-resistance of 53 mΩ at VGS = 10V, a total gate charge of 8.7 nC, and an internal gate resistance of 1.9 Ω. Dynamic switching performance includes a turn-on delay time of 7.4 ns, rise time of 2.8 ns, turn-off delay time of 14 ns, and fall time of 4.3 ns.

Single FETs, MOSFETs Feature Summary

• Optimized key parameters including low RDS(on), low Qg, and low Qrr specifically for Class-D audio amplifier efficiency and THD performance.
• DirectFET packaging technology provides lower parasitic inductance and resistance compared to conventional wirebonded SOIC packages.
• Dual-sided cooling compatible design maximizes thermal transfer and improves power dissipation capabilities.
• RoHS compliant and lead-free construction qualified up to 260°C reflow temperatures.

Single FETs, MOSFETs Applications

• Class-D audio amplifier output stages
• High-efficiency digital audio systems
• Power modules requiring low EMI and reduced ringing

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TRPBF indicates tape and reel packaging containing 4800 units per standard reel. Confirm that the component meets RoHS compliance standards and lead-free requirements as specified in the datasheet. Ensure application notes regarding DirectFET manufacturing methods are consulted during PCB assembly to maintain package integrity.

Single FETs, MOSFETs Selection Notes

Select this component when designing Class-D amplifiers requiring optimized switching speed and low electromagnetic interference. The DirectFET package is suitable for layouts compatible with existing surface mount technologies. Consider dual-sided cooling requirements if maximizing thermal performance is critical for the specific power dissipation needs of the application.

Single FETs, MOSFETs Part Context

The IRF6665TRPBF belongs to the IRF6665 family of Digital Audio MOSFETs manufactured by Infineon Technologies (formerly International Rectifier). It is part of the DirectFET product line, which integrates advanced silicon processing techniques to enhance performance metrics such as efficiency and total harmonic distortion in audio power applications.

Single FETs, MOSFETs Replacement Considerations

The IRF6665PbF is the tube-packaged equivalent of the IRF6665TRPBF. Both devices share identical electrical specifications and functionality; the distinction lies solely in the shipping packaging format.

Single FETs, MOSFETs FAQ

What is the maximum power output capability of the IRF6665TRPBF?

The device can deliver up to 100W per channel into an 8-ohm load without a heatsink, based on testing conducted at Vbus=±45V, fSW=400KHz, and TA=25°C.

How does the DirectFET package improve performance over SOIC?

The DirectFET package offers lower parasitic inductance and resistance compared to conventional wirebonded SOIC packaging, which reduces voltage ringing during fast current transients and improves EMI performance.

Is the IRF6665TRPBF suitable for high-temperature soldering processes?

Yes, the component is lead-free and qualified for reflow temperatures up to 260°C, making it compatible with standard surface mount assembly processes.