Single FETs, MOSFETs IRF6674TR1PBF product image

IRF6674TR1PBF

$2.15
  • Description:MOSFET N-CH 60V 13.4A DIRECTFET
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c4cab16a58e5 Category: Brand:

  
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IRF6674TR1PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 13.4A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF6674TR1PBF

  • Description:MOSFET N-CH 60V 13.4A DIRECTFET
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:13.4A (Ta), 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:11mOhm @ 13.4A, 10V
  • Vgs(th) (Max) @ Id:4.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.6W (Ta), 89W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DIRECTFET™ MZ
  • Package / Case:DirectFET™ Isometric MZ

Single FETs, MOSFETs datasheet and documents for IRF6674TR1PBF

IRF6674TR1PBF

Single FETs, MOSFETs Overview

The IRF6674TR1PBF is a single N-channel power MOSFET from Infineon Technologies, belonging to the StrongIRFET family. It utilizes DirectFET MX packaging for surface mount installation. The device features a drain-source voltage rating of 60 V and supports a continuous drain current of up to 67 A at 25°C ambient temperature. Key electrical characteristics include a maximum on-resistance of 11 mΩ at 10 V gate drive and a typical gate charge of 24 nC at 10 V. The component operates within a junction temperature range of -40°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Integrated DirectFET MX package design enabling high thermal performance and low inductance.
  • Optimized gate charge characteristics supporting efficient switching operations.
  • Robust thermal management capabilities with defined junction-to-case thermal resistance.

Single FETs, MOSFETs Applications

  • Synchronous rectification in DC-DC converters
  • High-efficiency AC-DC power supply designs
  • Point-of-load regulation modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TR1PBF against official Infineon documentation to confirm tape-and-reel packaging and lead-free compliance status. Confirm current production lifecycle status as distribution channels may list obsolete or end-of-life notifications. Ensure moisture sensitivity level handling procedures are followed during assembly to prevent package damage.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V rating is required alongside high current capacity in a compact footprint. Compare the 11 mΩ on-resistance against system conduction loss requirements. Evaluate the DirectFET MX thermal profile against available PCB copper area for adequate heat dissipation without excessive heatsinking.

Single FETs, MOSFETs Part Context

This part belongs to the StrongIRFET series, which integrates advanced trench gate technology with optimized package structures. The DirectFET MX variant specifically targets applications demanding superior thermal conductivity and reduced parasitic inductance compared to traditional surface mount packages.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Consider IRF6678TR1PBF for lower voltage (30V) applications requiring similar current handling. Verify pinout compatibility and thermal resistance specifications before substituting.

IRF6674TR1PBFIRF6674TR1PBF
$2.15
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