IRF6726MTR1PBF

Description：MOSFET N-CH 30V 32A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:48638c5532dc Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRF6726MTR1PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 32A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF6726MTR1PBF

Description：MOSFET N-CH 30V 32A DIRECTFET
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.7mOhm @ 32A, 10V
Vgs(th) (Max) @ Id：2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs：77 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6140 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 89W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DIRECTFET™ MT
Package / Case：DirectFET™ Isometric MT

Single FETs, MOSFETs datasheet and documents for IRF6726MTR1PBF

IRF6726MTR1PBF

Single FETs, MOSFETs Overview

The IRF6726MTR1PBF is an N-channel Power MOSFET utilizing HEXFET technology and DirectFET MX packaging. It features a maximum drain-source voltage of 30 V, continuous drain current of 180 A at 25°C case temperature, and typical on-resistance of 1.3 mΩ at 10 V gate drive. Total gate charge is typically 51 nC at 4.5 V. The component operates with a junction temperature range up to 150 °C and includes a body diode with reverse recovery time of 27 ns.

Single FETs, MOSFETs Feature Summary

Combines advanced silicon technology with low-profile DirectFET packaging for ultra-low package inductance.
Optimized for high-frequency synchronous buck converters to minimize conduction and switching losses.
Supports dual-sided cooling to maximize thermal transfer efficiency.

Single FETs, MOSFETs Applications

High-efficiency DC-DC converters
Processor core power supplies
Synchronous buck applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TR1PBF corresponds to the required tape and reel quantity of 1000 parts on a 7-inch reel. Confirm that the component meets RoHS compliance standards and lead-free requirements as specified in the manufacturer documentation before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low profile and high current handling within a 30 V system. Ensure the application utilizes surface mount techniques compatible with vapor phase or convection soldering. Verify that the PCB layout supports the DirectFET footprint and allows for effective thermal management via the exposed drain pad.

Single FETs, MOSFETs Part Context

This device belongs to the DirectFET family, designed to balance low resistance and low charge. It is optimized for parameters critical in synchronous buck operation from 12 V bus converters. The package geometry matches existing MICRO-8 layouts while providing superior thermal performance compared to previous generations.