IRF730AL

Description：MOSFET N-CH 400V 5.5A I2PAK
Series：-
Mfr：Vishay Siliconix
Package：Bulk

SKU:c47903549b18 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF730AL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 400V 5.5A I2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF730AL

Description：MOSFET N-CH 400V 5.5A I2PAK
Series：-
Mfr：Vishay Siliconix
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：400 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：74W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IRF730AL

IRF730AL

Single FETs, MOSFETs Overview

The IRF730AL is a Vishay Siliconix N-channel power MOSFET in an I2PAK (TO-262) package. It features a 400 V drain-source voltage rating and a maximum on-resistance of 1.0 Ω at VGS = 10 V. The device supports a continuous drain current of 5.5 A at 25 °C case temperature, with a total gate charge of 22 nC. It operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Low gate charge for simple drive requirements
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current

Single FETs, MOSFETs Applications

Switch mode power supply (SMPS)
Uninterruptible power supply
High speed power switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and halogen-free compliance. Confirm that the I2PAK (TO-262) package variant matches your PCB footprint requirements. Ensure thermal management design accounts for the specified linear derating factor and maximum power dissipation limits under steady-state conditions.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche performance and low gate drive complexity. The TO-262 package provides effective heat dissipation capabilities suitable for through-hole mounting. Evaluate the 1.0 Ω on-resistance against your conduction loss requirements at the intended operating current levels.

Single FETs, MOSFETs Part Context

This part belongs to the IRF730AS and SiHF730AS family of power MOSFETs from Vishay Siliconix. It shares electrical characteristics with other variants in the series but differs in physical packaging. The I2PAK configuration distinguishes it from the D2PAK (TO-263) versions available in the same product line.