IRF740STRR

$1.39

Description：MOSFET N-CH 400V 10A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:745fd2660ef7 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF740STRR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 400V 10A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF740STRR

Description：MOSFET N-CH 400V 10A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：400 V
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta), 125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRF740STRR

IRF740STRR

Single FETs, MOSFETs Overview

The IRF740STRR is a Vishay Siliconix N-Channel Power MOSFET housed in a D2PAK (TO-263) surface-mount package. It features a drain-source voltage of 400 V and a continuous drain current of 10 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.55 Ω at VGS = 10 V. Key dynamic parameters include a total gate charge of 63 nC, turn-on delay time of 14 ns, rise time of 27 ns, turn-off delay time of 50 ns, and fall time of 24 ns.

Single FETs, MOSFETs Feature Summary

Third-generation power MOSFET technology providing fast switching capabilities and ruggedized device design.
Surface-mount construction in a D2PAK (TO-263) package designed for high current applications with low internal connection resistance.
Capable of repetitive avalanche energy ratings and featuring a dynamic dV/dt rating for robust performance.

Single FETs, MOSFETs Applications

High frequency switching power supplies
DC-DC converters
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm lead-free status and tape-and-reel packaging configuration. Ensure the component matches the required RoHS compliance level for your assembly process. Cross-reference the manufacturer part number against official Vishay documentation to validate authenticity and revision history before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount solution is required for high-voltage applications up to 400 V. Consider the thermal characteristics and the need for adequate PCB copper area to manage power dissipation effectively. Evaluate the gate charge requirements against your driver capabilities to ensure optimal switching performance.

Single FETs, MOSFETs Part Context

This device belongs to the IRF740S/SiHF740S family of third-generation power MOSFETs from Vishay Siliconix. These components are engineered to offer an optimized balance of low on-resistance, fast switching speeds, and cost-effectiveness for industrial and commercial power electronics designs.

Single FETs, MOSFETs Replacement Considerations

IRF740SPbF

Single FETs, MOSFETs FAQ

Is the IRF740STRR rated for repetitive avalanche operation?

Yes, the datasheet specifies that the device is repetitive avalanche rated with a single pulse avalanche energy of 520 mJ and a repetitive avalanche energy of 13 mJ.