IRF7749L2TR1PBF

Single FETs, MOSFETs Overview

The IRF7749L2TR1PBF is a single N-channel HEXFET power MOSFET utilizing DirectFET L8 packaging. It features a 60V drain-source voltage rating and a typical on-resistance of 1.1mΩ at 10V gate drive. The device supports a continuous drain current of 375A at case temperature and handles pulsed currents up to 800A. Key electrical parameters include a total gate charge of 200nC, a threshold voltage of 2.9V, and a maximum junction temperature of 175°C. Thermal resistance from junction to case is typically 1.2°C/W.

Single FETs, MOSFETs Feature Summary

• Combines advanced HEXFET silicon technology with DirectFET packaging for minimized on-state resistance within a footprint smaller than D2PAK.
• Optimized for high-frequency switching and synchronous rectification applications to reduce total losses.
• Features dual-sided cooling compatibility to maximize thermal transfer in power systems.
• Provides high Cdv/dt immunity suitable for isolated converter primary switch sockets.

Single FETs, MOSFETs Applications

• High performance isolated converter primary switch sockets
• Synchronous rectification circuits
• Industrial power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TR1PBF against current manufacturer documentation, as it indicates a mini-reel quantity of 1000 parts. Confirm availability status directly with Infineon or authorized distributors, noting that certain packaging options may have reached end-of-life. Ensure compliance with industrial qualification standards required for the target application environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses and high efficiency are critical in compact power designs. The DirectFET L8 package allows compatibility with existing surface mount techniques while supporting dual-sided cooling. Consider the 60V rating and 1.1mΩ on-resistance balance for applications requiring high current handling in a small form factor compared to traditional packages.

Single FETs, MOSFETs Part Context

This part belongs to the DirectFET family of power MOSFETs from Infineon Technologies (formerly International Rectifier). It utilizes the L8 isometric outline designed for superior thermal performance. The technology integrates HEXFET silicon processing with specialized packaging to achieve industry-leading on-resistance density.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Evaluate other DirectFET L8 variants with matching voltage and resistance ratings, such as the IRF7749L1 series, ensuring pinout and thermal characteristics align with the existing PCB layout.