IRF830A

Description：MOSFET N-CH 500V 5A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:b51f374841f8 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF830A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 5A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF830A

Description：MOSFET N-CH 500V 5A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：620 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：74W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRF830A

IRF830A

Single FETs, MOSFETs Overview

The IRF830A is a single N-channel power MOSFET manufactured by Vishay Siliconix. It features a maximum drain-source voltage of 500 V and a continuous drain current of 5.0 A at 25 °C case temperature. The device has a maximum on-state resistance of 1.4 Ω at VGS = 10 V. Total gate charge is specified at a maximum of 24 nC. Maximum power dissipation is 74 W at 25 °C. Operating junction and storage temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Low gate charge for simple drive requirements
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
Effective Coss specified

Single FETs, MOSFETs Applications

Switch mode power supply (SMPS)
Uninterruptable power supply
High speed power Switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. Suffixes such as PbF or BE3 indicate lead-free and halogen-free compliance status. Confirm RoHS compliance details directly with the manufacturer or authorized distributors, as terminations may vary between compliant and non-compliant versions.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage switching applications requiring robust avalanche performance. Ensure thermal management meets the linear derating factor of 0.59 W/°C above 25 °C. Verify that the gate drive circuitry aligns with the specified total gate charge and threshold voltage parameters for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Power MOSFET family. It utilizes TO-220AB packaging. The product line includes variants with different termination finishes. The datasheet provides comprehensive electrical characteristics and thermal resistance ratings for design integration.