IRF840LCPBF-BE3

$2.35

Description：MOSFET N-CHANNEL 500V
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9b6376041b3b Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF840LCPBF-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CHANNEL 500V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF840LCPBF-BE3

Description：MOSFET N-CHANNEL 500V
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：850mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRF840LCPBF-BE3

IRF840LCPBF-BE3

Single FETs, MOSFETs Overview

The IRF840LCPBF-BE3 is a Vishay Siliconix N-channel power MOSFET utilizing LCDMOS technology. It features a drain-source voltage of 500 V and a continuous drain current of 8 A at 25 °C case temperature. The maximum on-state resistance is 0.85 Ω at VGS = 10 V. Total gate charge is limited to 39 nC, with gate-source threshold voltage ranging from 2.0 V to 4.0 V. Maximum power dissipation is 125 W. Operating junction temperature spans -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Ultra-low gate charge achieved through LCDMOS technology
Enhanced 30 V gate-source voltage rating
Repetitive avalanche rated for ruggedness
Reduced input, output, and reverse transfer capacitance

Single FETs, MOSFETs Applications

High frequency switching applications
Power conversion circuits
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix BE3 indicates lead-free and halogen-free compliance when sourcing. Confirm package type TO-220AB matches mechanical constraints. Ensure thermal management aligns with the specified 125 W dissipation limit. Validate RoHS status against project requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-frequency operation due to reduced switching losses. The enhanced 30 V VGS rating provides improved noise immunity compared to standard 20 V devices. Low gate charge minimizes driver power consumption. Verify that the 0.85 Ω RDS(on) meets efficiency targets under expected load currents.

Single FETs, MOSFETs Part Context

This device belongs to the IRF840LC series, representing an evolution of the classic IRF840 architecture. It integrates modern low-charge capabilities into a proven TO-220AB footprint. The product maintains compatibility with existing board layouts while offering superior dynamic performance for modern power electronics designs.