IRF9Z24NL

Single FETs, MOSFETs Overview

The IRF9Z24NL is a single P-channel silicon power MOSFET from the Fifth Generation HEXFET family, manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance per silicon area. The device is housed in a TO-262AA (TO-262) low-profile through-hole package. Key electrical parameters include a drain-source voltage of -55 V, a continuous drain current of -12 A at 25°C, and a maximum on-resistance of 0.175 Ω at 10 V gate drive. It features an avalanche-rated ruggedized design with a junction temperature rating up to 175°C.

Single FETs, MOSFETs Feature Summary

• Fifth Generation HEXFET technology for low on-resistance
• Fast switching speed capability
• Fully avalanche rated ruggedized design
• Low thermal resistance construction

Single FETs, MOSFETs Applications

• Motor control circuits
• Switching mode power supplies
• Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'NL' against official Infineon documentation to confirm the TO-262AA through-hole package variant. Ensure compliance requirements match project needs, as some sources indicate non-RoHS status for this specific part number while others list RoHS variants. Confirm availability of simulation models if circuit design requires SPICE integration.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with -55V rating and -12A current capacity is required in a through-hole format. The TO-262AA package offers lower profile than standard TO-220 while maintaining similar thermal performance. Consider the 0.175Ω on-resistance for efficiency calculations in low-voltage DC-DC converters or motor drivers.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET Power MOSFET family, known for high reliability and fast switching. It is designed for commercial and industrial applications where moderate power dissipation levels are encountered. The P-channel configuration allows for high-side switching capabilities without requiring level shifting for gate drive in many common topologies.

Single FETs, MOSFETs Replacement Considerations

IRF9Z24NS: Surface mount D2PAK equivalent with identical electrical characteristics. IRF9Z24NPBF: Through-hole TO-220 package variant with same electrical specs. Verify pinout compatibility and thermal management requirements when substituting between package types.