IRFB16N50KPBF

$1.45

Description：MOSFET N-CH 500V 17A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:cb2450705e11 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFB16N50KPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 17A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFB16N50KPBF

Description：MOSFET N-CH 500V 17A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：350mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：89 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2210 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：280W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRFB16N50KPBF

IRFB16N50KPBF

Single FETs, MOSFETs Overview

The Vishay Siliconix IRFB16N50KPBF is a single N-Channel Power MOSFET housed in a TO-220 package. It features a Drain-Source Voltage (VDS) of 500 V and a continuous Drain Current (ID) of 17 A at 25 °C case temperature, dropping to 11 A at 100 °C. The maximum Drain-Source On-State Resistance (RDS(on)) is 0.350 Ω at VGS = 10 V. Total Gate Charge (Qg) is 89 nC max. Maximum Power Dissipation is 280 W at 25 °C. Operating junction temperature range is -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

Low gate charge for simple drive requirements
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage/current
Lead-free available

Single FETs, MOSFETs Applications

Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact part number IRFB16N50KPBF. Confirm the manufacturer is Vishay Siliconix. Ensure the package type is TO-220. Check RoHS compliance status as lead-free versions are available. Validate datasheet revision and date code if critical.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring 500 V blocking capability. Consider the 17 A continuous current rating at 25 °C case temperature. Evaluate thermal management needs given the 280 W power dissipation rating. Assess gate drive requirements based on the 89 nC total gate charge. Verify compatibility with hard switching and high-frequency circuit topologies.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix IRFB series of N-Channel Power MOSFETs. It utilizes planar technology for low on-resistance. The TO-220 package provides through-hole mounting options. The K suffix indicates specific manufacturing lot or revision details defined by Vishay.

Single FETs, MOSFETs Replacement Considerations

SiHFB16N50K-E3 is a lead-free alternative within the same family. SiHFB16N50K is the tin-lead version. Verify pinout and electrical parameters match before substitution.