IRFIB5N50LPBF

$1.05

Description：MOSFET N-CH 500V 4.7A TO220-3
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:249833a31b32 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRFIB5N50LPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 500V 4.7A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFIB5N50LPBF

Description：MOSFET N-CH 500V 4.7A TO220-3
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：800mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3 Full Pack, Isolated Tab

Single FETs, MOSFETs datasheet and documents for IRFIB5N50LPBF

IRFIB5N50LPBF

Single FETs, MOSFETs Overview

The Vishay Siliconix IRFIB5N50LPBF is a single N-channel Power MOSFET housed in a TO-220 FULLPAK package. It features a 500 V drain-source voltage rating and a continuous drain current of 4.7 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.80 Ω at VGS = 10 V, with a typical value of 0.67 Ω. Total gate charge is limited to 45 nC, supporting efficient switching performance. The component operates within a junction temperature range of -55 °C to +150 °C and includes an enhanced body diode for improved ruggedness.

Single FETs, MOSFETs Feature Summary

Super fast body diode eliminates the need for external diodes in zero voltage switching applications
Lower gate charge results in simpler drive requirements
Enhanced dV/dt capabilities offer improved ruggedness
Higher gate voltage threshold offers improved noise immunity

Single FETs, MOSFETs Applications

Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control Applications

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the required lead-free specification. Confirm the package type aligns with thermal management needs. Check RoHS compliance status against project requirements. Ensure availability from authorized distributors. Review datasheet revisions for any updates to electrical characteristics or reliability data before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when high noise immunity and ruggedness are critical. The higher gate threshold voltage distinguishes it from standard logic-level devices. Consider the thermal resistance ratings for heatsink design. Evaluate the body diode reverse recovery characteristics for resonant converter topologies. Compare total gate charge against driver capabilities to optimize switching speed.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix IRFIB series of power MOSFETs. The series is designed for high-voltage switching applications requiring robust body diode performance. The TO-220 FULLPAK package provides a balance between thermal dissipation and mounting convenience. It serves as a discrete solution for medium-power conversion circuits.