IRFL024NTR

Description：MOSFET N-CH 55V 2.8A SOT223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:8afd6a032d4e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFL024NTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 2.8A SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFL024NTR

Description：MOSFET N-CH 55V 2.8A SOT223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：75mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for IRFL024NTR

IRFL024NTR

Single FETs, MOSFETs Overview

The IRFL024NTR is a surface-mount N-channel power MOSFET from the Fifth Generation HEXFET family, manufactured by Infineon Technologies. It features a SOT-223 package with an enlarged tab for improved thermal performance. The device offers a drain-source breakdown voltage of 55V and a continuous drain current of 2.8A at 25°C on a standard FR-4 board. It achieves an ultra-low static drain-to-source on-resistance of 75 milliohms at a gate drive of 10V. The component supports a maximum junction temperature of 150°C and includes fully avalanche-rated ruggedized design characteristics.

Single FETs, MOSFETs Feature Summary

Utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area
Features fast switching speed and dynamic dv/dt rating capabilities
Incorporates a ruggedized device design that is fully avalanche rated
SOT-223 package designed for surface-mount applications with enhanced heatsinking

Single FETs, MOSFETs Applications

Surface-mount power switching circuits
Applications requiring efficient heat dissipation via enlarged thermal tabs
Automated pick-and-place assembly processes

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and packaging type. Confirm the manufacturer source as International Rectifier or Infineon Technologies depending on the production era. Ensure the component matches the SOT-223 footprint requirements for your PCB layout.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a balance of low conduction losses and compact surface-mount integration. Evaluate the thermal resistance parameters based on the specific copper area available on the printed circuit board. Consider the gate charge specifications when designing the driver circuitry for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET Power MOSFET series developed by International Rectifier, which was subsequently acquired by Infineon Technologies. The product line utilizes fifth-generation process technology to deliver high reliability and performance in small form factors suitable for modern electronic assemblies.