IRFR214TRR

$1.06

Description：MOSFET N-CH 250V 2.2A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:9803231c04c4 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFR214TRR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 250V 2.2A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR214TRR

Description：MOSFET N-CH 250V 2.2A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：140 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR214TRR

IRFR214TRR

Single FETs, MOSFETs Overview

The IRFR214TRR is a single N-channel enhancement mode power MOSFET manufactured by Vishay Siliconix. It utilizes silicon technology and features a DPAK-3 (TO-252-3) surface-mount package. The device is rated for a drain-source breakdown voltage of 250 V and a continuous drain current of 2.2 A. Its maximum on-resistance is specified at 2 Ohms, with a gate threshold voltage of 4 V. The component supports a gate-source voltage range of -20 V to +20 V and has a total gate charge of 8.2 nC. It operates within a temperature range of -55°C to +150°C, dissipating up to 25 W of power.

Single FETs, MOSFETs Feature Summary

Designed to withstand specified energy levels in the breakdown avalanche mode of operation
Capable of direct drive from integrated circuits due to low gate-drive power requirements
Optimized for high-speed switching applications

Single FETs, MOSFETs Applications

Converters
Motor drivers
Relay drivers
Drivers for high-power bipolar switching transistors

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and manufacturer documentation for the IRFR214TRR variant, as availability may vary. Confirm that the TO-252AA package dimensions match your PCB footprint requirements. Ensure compliance with relevant RoHS and REACH directives before integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring moderate voltage blocking capabilities combined with low current handling. The 2 Ohm on-resistance makes it suitable for applications where conduction losses are less critical than cost or availability. Consider thermal management strategies given the 25 W power dissipation rating in the DPAK package.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR series of power MOSFETs from Vishay Siliconix. The 'TRR' suffix typically indicates a tape and reel packaging format, distinguishing it from tube-packaged variants like the IRFR214PBF. It shares core electrical characteristics with other members of the IRFR family designed for general-purpose power switching.