IRFR3707ZPBF

Single FETs, MOSFETs Overview

The IRFR3707ZPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a DPAK-3 (TO-252-3) surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 56 A at 25°C. Its maximum on-resistance is specified as 9.5 mΩ at 10 V gate drive and 12.5 mΩ at 4.5 V gate drive. The total gate charge is 9.6 nC, with a maximum power dissipation of 50 W. Operating temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Hexfet planar technology designed for low on-resistance and fast switching performance.
• Enhancement mode operation with high input impedance and low gate charge characteristics.
• Robust avalanche energy rating suitable for inductive load switching applications.

Single FETs, MOSFETs Applications

• High-frequency synchronous buck converters for computer processor power supplies
• DC-DC converter circuits requiring low voltage drop and high efficiency
• Power management systems utilizing lead-free packaging standards

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to the discontinued status of this specific part number. Confirm RoHS compliance documentation matches the required environmental standards for your assembly process. Ensure that the DPAK-3 package dimensions align with your PCB footprint design before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V N-channel MOSFET with low Rds(on) is required for surface-mount applications. Consider the thermal resistance and power dissipation limits relative to your heatsinking strategy. Evaluate the gate charge requirements against your driver capabilities to ensure optimal switching speeds without excessive drive losses.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies, known for combining low on-resistance with fast switching speeds. The IRFR3707ZPBF variant specifically addresses the need for lead-free compliant components in modern electronics manufacturing. It serves as a successor to earlier International Rectifier designs within the same electrical specification envelope.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Potential alternatives include the IRFU3707ZPBF for through-hole mounting or the IRF3707ZSPBF for D2PAK packaging, provided pinout compatibility and thermal characteristics are validated.