IRFR3711

Single FETs, MOSFETs Overview

The IRFR3711 is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in a D-Pak (TO-252) surface-mount package. It features a maximum drain-source voltage of 20V and a continuous drain current rating of 110A at a case temperature of 25°C. The device exhibits an ultra-low on-resistance with a maximum value of 6.5mΩ at VGS=10V and a typical value of 5.2mΩ at VGS=4.5V. Key dynamic parameters include a total gate charge of 29nC and a forward transconductance exceeding 53S. Thermal performance is characterized by a junction-to-case thermal resistance of 1.04°C/W, supporting high-frequency switching applications.

Single FETs, MOSFETs Feature Summary

• Ultra-low gate impedance for efficient driver requirements
• Very low RDS(on) characteristics optimized for 4.5V gate drive
• Fully characterized avalanche voltage and current capabilities
• Optimized for synchronous buck converters including capacitive induced turn-on immunity

Single FETs, MOSFETs Applications

• High frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use
• High frequency buck converters for server processor power synchronous FETs
• Switch mode power supplies (SMPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm packaging format, as standard tape-and-reel options exist alongside tube configurations. Confirm RoHS compliance status for the exact part number variant being procured. Ensure the component meets the required moisture sensitivity level for your assembly process. Cross-reference the manufacturer's latest datasheet revision to validate all electrical parameters against your design specifications before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 20V breakdown voltage with high current handling capabilities up to 110A. The low gate charge and resistance make it suitable for high-efficiency synchronous rectification where minimizing conduction and switching losses is critical. Consider the thermal resistance limits and ensure adequate heatsinking or PCB copper area to maintain junction temperatures within the specified operating range during peak load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs from Infineon Technologies, designed for robust performance in power conversion applications. The D-Pak package provides a balance between current carrying capacity and compact surface-mount footprint. It serves as a key component in modern power management architectures, particularly where space constraints and efficiency demands are stringent.

Single FETs, MOSFETs Replacement Considerations

The IRFU3711 is a through-hole equivalent offering identical electrical specifications in an I-Pak package. When substituting, verify that the target application can accommodate the different mounting style and pin configuration changes associated with the alternative package type.