Single FETs, MOSFETs IRFR4104TRLPBF product image

IRFR4104TRLPBF

$0.61
  • Description:MOSFET N-CH 40V 42A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:cb9fa599d058 Category: Brand:

  
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IRFR4104TRLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR4104TRLPBF

  • Description:MOSFET N-CH 40V 42A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:5.5mOhm @ 42A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:89 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2950 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):140W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR4104TRLPBF

IRFR4104TRLPBF

Single FETs, MOSFETs Overview

The IRFR4104TRLPBF is an N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a D-Pak (TO-252) surface-mount package and supports a maximum junction temperature of 175°C. Key electrical parameters include a drain-source breakdown voltage of 40V, a continuous drain current of 42A at 25°C case temperature, and a typical on-resistance of 4.3mΩ. The device exhibits fast switching characteristics with a turn-on delay of 17ns and a fall time of 36ns. Total gate charge is typically 59nC, and the body diode reverse recovery time is 28ns.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced HEXFET processing technology to achieve ultra-low on-resistance per silicon area.
  • Supports repetitive avalanche operation up to the maximum junction temperature limit.
  • Designed for high-speed switching applications with optimized dynamic performance.

Single FETs, MOSFETs Applications

  • DC-DC converters
  • Synchronous rectification circuits
  • Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the required tape-and-reel packaging configuration. Confirm RoHS compliance status and lead-free designation through official manufacturer documentation or authorized distributor channels before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the gate drive circuitry can supply sufficient current to manage the total gate charge effectively. Verify that the operating voltage and current limits remain within the absolute maximum ratings under all expected load conditions.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is designed for industrial market applications requiring reliable switching performance. The part utilizes silicon-based semiconductor technology and is available in standard surface-mount configurations suitable for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides for verified alternative part numbers. Cross-reference pinout compatibility and electrical parameter tolerances when considering equivalent devices from other manufacturers.

IRFR4104TRLPBFIRFR4104TRLPBF
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