Single FETs, MOSFETs IRFR5410TRRPBF product image

IRFR5410TRRPBF

$1.57
  • Description:MOSFET P-CH 100V 13A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:6745bf8aeea7 Category: Brand:

  
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IRFR5410TRRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 13A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR5410TRRPBF

  • Description:MOSFET P-CH 100V 13A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:205mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):66W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR5410TRRPBF

IRFR5410TRRPBF

Single FETs, MOSFETs Overview

The IRFR5410TRRPBF is a single P-channel enhancement mode MOSFET from the Infineon HEXFET series, housed in a DPAK-3 (TO-252-3) surface-mount package. It features a drain-source breakdown voltage of 100 V and supports a continuous drain current of 13 A. The device exhibits a maximum on-resistance of 205 mOhms at -7.8 A. Gate characteristics include a threshold voltage of 4 V and a total gate charge of 38.7 nC. Thermal performance allows for a power dissipation of 66 W, with an operating temperature range spanning from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced fifth-generation HEXFET technology for optimized switching efficiency.
  • Provides high avalanche energy capability suitable for demanding industrial environments.
  • Features low thermal resistance for effective heat dissipation in compact designs.

Single FETs, MOSFETs Applications

  • DC/DC converters
  • Motor control circuits
  • Power management systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels due to the NRND status. Confirm datasheet revisions match design requirements. Ensure ESD handling protocols are followed during assembly. Validate that the TO-252-3 footprint aligns with PCB layout specifications. Check for RoHS compliance documentation before final procurement approval.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and robust avalanche ratings are required over ultra-low gate charge. The 205 mOhm on-resistance dictates thermal management needs. Consider the 100 V rating for appropriate voltage headroom. Evaluate the TO-252-3 package constraints against available board space and soldering capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs known for reliability. It serves as a P-channel alternative to N-channel devices in half-bridge or high-side switching configurations. The TRRPBF suffix indicates tape-and-reel packaging for automated manufacturing processes.

Single FETs, MOSFETs Replacement Considerations

The IRFR5410TRPBF is a verified equivalent variant differing only in packaging format. Verify pinout compatibility and electrical parameters before substitution. No other direct substitutes are confirmed in public documentation.

IRFR5410TRRPBFIRFR5410TRRPBF
$1.57
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