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IRFR5410TRRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 13A DPAK. Review the specifications below when checking this part for your BOM.
The IRFR5410TRRPBF is a single P-channel enhancement mode MOSFET from the Infineon HEXFET series, housed in a DPAK-3 (TO-252-3) surface-mount package. It features a drain-source breakdown voltage of 100 V and supports a continuous drain current of 13 A. The device exhibits a maximum on-resistance of 205 mOhms at -7.8 A. Gate characteristics include a threshold voltage of 4 V and a total gate charge of 38.7 nC. Thermal performance allows for a power dissipation of 66 W, with an operating temperature range spanning from -55 °C to +150 °C.
Verify component authenticity through authorized channels due to the NRND status. Confirm datasheet revisions match design requirements. Ensure ESD handling protocols are followed during assembly. Validate that the TO-252-3 footprint aligns with PCB layout specifications. Check for RoHS compliance documentation before final procurement approval.
Select this component when high current handling and robust avalanche ratings are required over ultra-low gate charge. The 205 mOhm on-resistance dictates thermal management needs. Consider the 100 V rating for appropriate voltage headroom. Evaluate the TO-252-3 package constraints against available board space and soldering capabilities.
This part belongs to the HEXFET family of power MOSFETs known for reliability. It serves as a P-channel alternative to N-channel devices in half-bridge or high-side switching configurations. The TRRPBF suffix indicates tape-and-reel packaging for automated manufacturing processes.
The IRFR5410TRPBF is a verified equivalent variant differing only in packaging format. Verify pinout compatibility and electrical parameters before substitution. No other direct substitutes are confirmed in public documentation.
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