IRFR9014TRR

Description：MOSFET P-CH 60V 5.1A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:cc21148cf706 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFR9014TRR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 60V 5.1A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR9014TRR

Description：MOSFET P-CH 60V 5.1A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：500mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：270 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR9014TRR

IRFR9014TRR

Single FETs, MOSFETs Overview

The Vishay Siliconix IRFR9014TRR is a P-channel power MOSFET in the DPAK (TO-252) surface-mount package. It features a -60 V drain-source voltage rating and a maximum continuous drain current of -5.1 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.50 Ω at a gate-source voltage of -10 V. Key dynamic parameters include a total gate charge of 12 nC, an input capacitance of 270 pF, and a peak diode recovery dV/dt rating of -4.5 V/ns. Thermal resistance from junction to case is 5.0 °C/W.

Single FETs, MOSFETs Feature Summary

Third-generation Power MOSFET technology providing fast switching capabilities and ruggedized device design.
Repetitive avalanche rated for robust performance in inductive load applications.
Includes a dynamic dV/dt rating to withstand rapid voltage transitions during body diode recovery.
Designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Single FETs, MOSFETs Applications

DC-DC converter circuits
Motor control systems
Power management modules

Single FETs, MOSFETs Procurement Notes

Verify that the specific ordering suffix matches the required lead-free and halogen-free compliance status. Confirm the package variant corresponds to the DPAK (TO-252) form factor. Ensure the component meets the material categorization definitions provided in the official Vishay documentation before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET with a -60 V breakdown voltage and low on-resistance is required for surface-mount designs. Evaluate the thermal resistance and power dissipation limits against the expected operating case temperature. Consider the gate charge requirements relative to the driving circuit's capability to ensure efficient switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR9014 family of third-generation P-channel Power MOSFETs manufactured by Vishay Siliconix. The series offers a combination of fast switching speeds, low on-resistance, and cost-effectiveness. The DPAK package variant is specifically engineered for surface-mount assembly processes.