IRFRC20TR

$1.47

Description：MOSFET N-CH 600V 2A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:aca0a0b1ba1c Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFRC20TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 2A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFRC20TR

Description：MOSFET N-CH 600V 2A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.4Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFRC20TR

IRFRC20TR

Single FETs, MOSFETs Overview

The IRFRC20TR is a third-generation N-channel Power MOSFET manufactured by Vishay Siliconix, housed in a DPAK (TO-252) surface-mount package. It features a drain-source voltage rating of 600 V and a continuous drain current of 2.0 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 4.4 Ω at VGS = 10 V and a total gate charge of 18 nC. Key electrical characteristics include a dynamic dV/dt rating of 3.0 V/ns and repetitive avalanche energy capability of 74 mJ.

Single FETs, MOSFETs Feature Summary

Dynamic dV/dt rating for high-speed switching applications
Repetitive avalanche rated for ruggedized operation
Fast switching performance with ease of paralleling

Single FETs, MOSFETs Applications

High-voltage power supply circuits
Motor control systems
Industrial switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm compliance requirements and manufacturing origin. The standard lead-free designation includes -PbF or -BE3 variants. Confirm that the tape and reel packaging matches the required quantity specifications for the production line before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V breakdown voltage is required alongside moderate current handling capabilities. The DPAK package facilitates efficient thermal dissipation through the drain tab. Ensure the gate drive voltage supports the specified RDS(on) threshold for optimal conduction losses in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the IRFRC/SiHFRC series of third-generation Power MOSFETs from Vishay Siliconix. These devices are engineered to provide a balance of fast switching speeds, low on-resistance, and cost-effectiveness. The series includes both surface-mount DPAK and straight-lead IPAK versions for diverse mounting requirements.