IRFS3806PBF

Description：MOSFET N-CH 60V 43A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:28aa820497bb Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFS3806PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 43A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFS3806PBF

Description：MOSFET N-CH 60V 43A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：15.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1150 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：71W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRFS3806PBF

IRFS3806PBF

Single FETs, MOSFETs Overview

The IRFS3806PBF is a HEXFET N-channel enhancement mode power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 60 V and a continuous drain current of 43 A at 25°C case temperature. The device exhibits a typical static drain-to-source on-resistance of 12.6 mΩ, with a maximum rating of 15.8 mΩ. Key dynamic characteristics include a total gate charge of 22 nC and an effective output capacitance (energy related) of 190 pF. The component operates within a junction temperature range of -55°C to +175°C and provides enhanced ruggedness for gate, avalanche, and dynamic dv/dt applications.

Single FETs, MOSFETs Feature Summary

Improved gate, avalanche, and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche safe operating area
Enhanced body diode dv/dt and di/dt capability

Single FETs, MOSFETs Applications

High efficiency synchronous rectification in SMPS
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant during procurement, as the IRFS3806PBF designation corresponds to the D2PAK (TO-263) surface mount package. Confirm lead-free compliance status through official manufacturer documentation or authorized distributors. Ensure that ordering suffixes are correctly interpreted, as they may indicate variations in packaging or material composition without altering the electrical function. Cross-reference part markings against official Infineon marking guides to authenticate components.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust performance in hard-switched and high-frequency environments. The optimized gate charge and low on-resistance support efficient power conversion in synchronous rectification topologies. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider the enhanced body diode recovery characteristics when designing circuits prone to reverse recovery events or high di/dt stress conditions.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is designed for industrial market applications and utilizes silicon technology. The product line emphasizes reliability and performance in power switching scenarios. Documentation indicates qualification standards applicable to industrial usage, ensuring consistent performance across varying environmental conditions and operational stresses.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon replacement guides for verified substitutes. No public confirmed substitute part numbers are available in the provided source material.