IRL2505L

Description：MOSFET N-CH 55V 104A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:d3179e8bff24 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRL2505L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 104A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRL2505L

Description：MOSFET N-CH 55V 104A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：104A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 54A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：130 nC @ 5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：5000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.8W (Ta), 200W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IRL2505L

IRL2505L

Single FETs, MOSFETs Overview

The IRL2505L is a single N-channel enhancement mode power MOSFET from the HEXFET family, manufactured by Infineon Technologies. It features a D2PAK surface-mount package with an isolated case for efficient heat dissipation. Key electrical parameters include a drain-source voltage of 55 V, a continuous drain current of 104 A, and a maximum on-resistance of 8 mΩ at 10 V gate drive. The device incorporates logic-level gate technology, allowing direct drive from standard 5 V logic interfaces while maintaining low switching losses.

Single FETs, MOSFETs Feature Summary

Logic-level gate threshold voltage enables direct control from 5 V digital logic sources without additional driver circuitry.
D2PAK package design provides an electrically isolated thermal path to facilitate effective heat sinking in high-power applications.
Ultra-low on-resistance minimizes conduction losses and improves overall system efficiency during steady-state operation.

Single FETs, MOSFETs Applications

Low-voltage DC-DC converter circuits
Motor control systems requiring high current handling
Power management modules for industrial equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' against official datasheets to confirm package type and lead-free status. Ensure compatibility with existing PCB footprints for the D2PAK configuration. Confirm that the component meets required automotive or industrial reliability standards if applicable to your design environment.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that require high current capacity within a compact surface-mount form factor. The logic-level gate characteristic makes it suitable for microcontroller-driven applications where minimizing external gate drive complexity is essential for cost and space optimization.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET Power MOSFET series, known for combining fast switching speeds with robust avalanche capabilities. The D2PAK variant offers superior thermal performance compared to smaller packages, making it ideal for power stages where junction temperature management is critical for long-term reliability.