Single FETs, MOSFETs IRLZ24NSTRR product image

IRLZ24NSTRR

$0.79
  • Description:MOSFET N-CH 55V 18A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:a45d7506a3a7 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

IRLZ24NSTRR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 18A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLZ24NSTRR

  • Description:MOSFET N-CH 55V 18A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:60mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 45W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRLZ24NSTRR

IRLZ24NSTRR

Single FETs, MOSFETs Overview

The IRLZ24NSTRR is a surface-mount N-channel power MOSFET from the HEXFET family, housed in a D2PAK (TO-263) package. It features a drain-source breakdown voltage of 55V and a continuous drain current rating of 18A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.06Ω at VGS=10V. It supports an operating junction temperature up to 175°C and includes avalanche energy ratings of 68mJ.

Single FETs, MOSFETs Feature Summary

  • Logic-level gate drive capability for direct microcontroller interfacing
  • Advanced process technology enabling low on-resistance per silicon area
  • Fast switching characteristics with fully rated avalanche ruggedness

Single FETs, MOSFETs Applications

  • Motor control circuits
  • Switch mode power supplies (SMPS)
  • High-current load switching applications

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix 'STRR' corresponds to tape-and-reel packaging when sourcing components. Confirm the manufacturer designation as Infineon Technologies or International Rectifier legacy stock. Ensure the component matches the D2PAK physical dimensions specified in the datasheet outline drawings before integration into PCB layouts.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring logic-level compatibility without external gate drivers. Evaluate thermal management requirements based on the 3.3°C/W junction-to-case resistance. Consider the 55V voltage rating for low-voltage DC bus applications where higher efficiency is required compared to standard MOSFETs.

Single FETs, MOSFETs Part Context

This part belongs to the Fifth Generation HEXFET Power MOSFET series developed by International Rectifier, now part of Infineon Technologies. The IRLZ24NS variant specifically denotes the surface-mount D2Pak package form factor, distinguishing it from through-hole versions like the TO-220AB.

Single FETs, MOSFETs Replacement Considerations

IRLZ24N: Through-hole equivalent with identical electrical specifications but different package geometry.

IRLZ24NSTRRIRLZ24NSTRR
$0.79
Buy Now

Recent News