Gate Driver IRS21851SPBF product image

IRS21851SPBF

  • Description:IC GATE DRVR HIGH-SIDE 8SOIC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:2bebfe18b606 Category: Brand:

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IRS21851SPBF is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HIGH-SIDE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for IRS21851SPBF

  • Description:IC GATE DRVR HIGH-SIDE 8SOIC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • Driven Configuration:High-Side
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:10V ~ 20V
  • Logic Voltage - VIL, VIH:0.8V, 2.5V
  • Current - Peak Output (Source, Sink):4A, 4A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):15ns, 15ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

Gate Driver datasheet and documents for IRS21851SPBF

IRS21851SPBF

Gate Driver Overview

The IRS21851SPBF is a high-side gate driver IC from Infineon Technologies, designed for driving IGBT or N-channel MOSFET power switches. It operates within a supply voltage range of 10 V to 20 V and supports logic inputs compatible with 3.3 V and 5.5 V systems. The device provides a peak output current of 4 A with rise and fall times of 15 ns. Packaged in an 8-pin SOIC (SMD/SMT), it features a single non-inverting output channel rated for 600 V blocking capability.

Gate Driver Feature Summary

  • Single-channel high-side gate driver architecture optimized for IGBT and N-channel MOSFET applications
  • Wide supply voltage range supporting 10 V to 20 V operation with low-voltage logic compatibility
  • High-speed switching performance with 15 ns rise and fall times and 4 A peak drive current

Gate Driver Applications

  • High-side switching for IGBT modules
  • N-channel MOSFET power switch drivers
  • Efficient power management circuits requiring isolated high-side control

Gate Driver Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm package integrity and pin alignment upon receipt. Check datasheet revisions for any updates to electrical characteristics or thermal recommendations. Ensure storage conditions comply with moisture sensitivity levels specified in the official documentation to prevent degradation before soldering.

Gate Driver Selection Notes

Select this component when a single high-side driver with 600 V isolation is required. It is suitable for designs needing 4 A peak current capability and fast switching speeds. Consider the 8-pin SOIC package for surface-mount assembly constraints. Verify that the application logic levels match the 3.3 V or 5.5 V input requirements specified for the control interface.

Gate Driver Part Context

This part belongs to Infineon's gate driver family, specifically tailored for high-side power switching applications. It complements other drivers in the series by offering a balance of speed and drive strength in a compact surface-mount package. The design focuses on simplifying circuit topology for single-switch high-side configurations without requiring external bootstrap components beyond standard implementation.

Gate Driver Replacement Considerations

Cross-reference with IRS21853SPBF for dual-channel requirements. Verify pinout compatibility if substituting within the same family. Ensure voltage ratings and drive currents meet or exceed original design specifications.

IRS21851SPBFIRS21851SPBF

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