Memory IC IS42S32400B-6BL product image

IS42S32400B-6BL

  • Description:IC DRAM 128MBIT PAR 90TFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray

SKU:9206751db10d Category: Brand:

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IS42S32400B-6BL is listed in the Memory IC range at ChipApex. The manufacturer field lists ISSI, Integrated Silicon Solution Inc. Its product description is IC DRAM 128MBIT PAR 90TFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for IS42S32400B-6BL

  • Description:IC DRAM 128MBIT PAR 90TFBGA
  • Series:-
  • Mfr:ISSI, Integrated Silicon Solution Inc
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM
  • Memory Size:128Mbit
  • Memory Organization:4M x 32
  • Memory Interface:Parallel
  • Clock Frequency:166 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:90-TFBGA
  • Supplier Device Package:90-TFBGA (8x13)
  • Access Time:5.4 ns

Memory IC datasheet and documents for IS42S32400B-6BL

IS42S32400B-6BL

Memory IC Overview

The IS42S32400B is a 128Mb Synchronous DRAM organized as 4 Meg x 32 bits across four internal banks. It supports clock frequencies of 166, 143, 125, and 100 MHz with CAS latencies of 2 or 3 clocks. The device operates on 3.3V VDD and VDDQ supplies within a -40°C to +85°C industrial temperature range. Access times are 5.4 ns for CL=3 and 6.5 ns for CL=2. Available in 86-pin TSOP-II and 90-ball FBGA packages.

Memory IC Feature Summary

  • Fully synchronous interface with all signals referenced to the positive clock edge.
  • Internal bank architecture allows hiding row access and precharge cycles during active operations.
  • Supports programmable burst lengths including sequential and interleave sequences.
  • Includes auto-refresh, self-refresh, and power-down modes for power management.

Memory IC Applications

  • High-speed data transfer systems requiring pipeline architecture
  • Industrial embedded memory applications
  • Systems utilizing LVTTL logic interfaces

Memory IC Procurement Notes

Verify the specific speed grade suffix (-6 or -7) required for your target clock frequency. Confirm package selection between TSOP-II and FBGA based on board layout constraints. Check current lifecycle status as this component may be subject to discontinuation. Ensure voltage levels match the 3.3V specification strictly.

Memory IC Selection Notes

Select the -6 variant for 166 MHz operation or -7 for 143 MHz. Choose the FBGA package for surface mount density or TSOP-II for alternative form factors. Verify that the system design accommodates the 3.3V I/O requirements and LVTTL compatibility. Consider thermal dissipation capabilities for the chosen package type under maximum load conditions.

Memory IC Part Context

This component belongs to ISSI's 128Mb SDRAM family, designed for high-performance synchronous memory applications. It utilizes a CMOS process technology optimized for low power consumption while maintaining high data throughput rates suitable for complex digital signal processing and computing environments.

Memory IC Replacement Considerations

Check for IS42S32400D or IS42S32400J variants which share similar specifications but may differ in package availability or exact timing parameters. Ensure any substitute maintains the 32-bit width and 128Mb capacity.

Memory IC FAQ

How does the Auto Precharge function operate?

Auto Precharge initiates at the end of a READ or WRITE burst when A10 is HIGH, automatically closing the accessed row without requiring an explicit PRECHARGE command.

What is the role of the DQM pins?

DQM0-DQM3 control the four bytes of the I/O buffers, enabling or disabling data output during reads and masking input data during writes.

IS42S32400B-6BLIS42S32400B-6BL

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