Single FETs, MOSFETs ISC0603NLSATMA1 product image

ISC0603NLSATMA1

$1.33
  • Description:MOSFET N-CH 80V 12.3A/56A TDSON
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:1578aae621a0 Category: Brand:

  
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ISC0603NLSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 12.3A/56A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for ISC0603NLSATMA1

  • Description:MOSFET N-CH 80V 12.3A/56A TDSON
  • Series:OptiMOS™ 5
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):80 V
  • Current - Continuous Drain (Id) @ 25°C:12.3A (Ta), 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8.9mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 24µA
  • Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 40 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 52W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-6
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for ISC0603NLSATMA1

ISC0603NLSATMA1

Single FETs, MOSFETs Overview

The ISC0603NLSATMA1 is an OptiMOS™5 power transistor featuring an N-channel enhancement mode structure. It provides a drain-source voltage of 80 V and a continuous drain current of 56 A at 25°C case temperature. The maximum on-state resistance is 8.9 mΩ at VGS=10 V. Key dynamic parameters include a total gate charge of 9.2 nC (0 to 4.5 V) and an output charge of 19 nC. The device operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Logic level architecture optimized for high-frequency switching applications
  • Superior thermal resistance characteristics with low junction-to-case resistance
  • 100% avalanche tested for enhanced ruggedness in inductive load scenarios

Single FETs, MOSFETs Applications

  • High-frequency switching circuits
  • Charger designs
  • Adapter power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against the manufacturer's official documentation to confirm packaging details and reel specifications. Ensure that the component meets all relevant environmental compliance standards, including RoHS and halogen-free requirements, as stated in the datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring an 80 V logic-level N-channel MOSFET with low gate charge for efficient drive control. Consider the 56 A continuous current rating and the 8.9 mΩ maximum on-resistance for conduction loss calculations. Evaluate the thermal performance based on the specified junction-to-case resistance for your specific cooling environment.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™5 family from Infineon Technologies, designed for low-voltage power switching. It utilizes PG-TDSON-8 surface-mount packaging to facilitate compact board layouts. The technology focuses on minimizing switching losses while maintaining robust performance under varying thermal conditions typical in consumer electronics power stages.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists or cross-reference tools provided by Infineon Technologies for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' components without verifying pinout compatibility, electrical ratings, and package dimensions.

ISC0603NLSATMA1ISC0603NLSATMA1
$1.33
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