ISL9K8120P3

Description：DIODE ARR AVAL 1200V 8A TO220-3
Series：Stealth™

SKU:c0106a0e30b1 Category: Diode Arrays Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

ISL9K8120P3 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE ARR AVAL 1200V 8A TO220-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for ISL9K8120P3

Description：DIODE ARR AVAL 1200V 8A TO220-3
Series：Stealth™
Mfr：onsemi
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：Avalanche
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：8A
Voltage - Forward (Vf) (Max) @ If：3.3 V @ 8 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：44 ns
Current - Reverse Leakage @ Vr：100 µA @ 1200 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for ISL9K8120P3

ISL9K8120P3

Diode Arrays Overview

The ISL9K8120P3 is a Stealth™ dual diode rated for 1200V repetitive peak reverse voltage and 8A average forward current per leg. It features fast recovery with trr < 32ns at low currents and soft recovery characteristics (tb/ta > 5.5) under high dIF/dt conditions. The device operates up to 150°C junction temperature and includes avalanche energy rating of 20mJ.

Diode Arrays Feature Summary

Soft reverse recovery minimizes ringing in hard-switched applications
Fast recovery time reduces switching losses in transistors
Avalanche energy rated for robust operation

Diode Arrays Applications

Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
Snubber Diode

Diode Arrays Procurement Notes

Verify the datasheet revision matches Rev. A. Confirm the package marking K8120P3 corresponds to the TO-220AB form factor. Ensure thermal management design accounts for RθJC of 1.75°C/W and RθJA of 62°C/W. Check that operating temperatures remain within -55°C to 150°C range.

Diode Arrays Selection Notes

Select this component for high-frequency hard-switched topologies requiring low reverse recovery charge. Suitable for use as free-wheeling or boost diodes where snubber circuitry reduction is desired. Consider pairing with 1200V NPT IGBTs for optimized power density designs.

Diode Arrays Part Context

Formerly developmental type TA49413. Part of the Stealth™ family designed for low loss performance. Manufactured by Fairchild Semiconductor Corporation, now part of onsemi. Available in lead-free packaging.