Diode Arrays IV1D12020T3 product image

IV1D12020T3

$15.90
  • Description:DIODE ARR SIC 1200V 30A TO247-3
  • Series:-

SKU:bd6defeacda5 Category: Brand:

  
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IV1D12020T3 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Inventchip. Its product description is DIODE ARR SIC 1200V 30A TO247-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for IV1D12020T3

  • Description:DIODE ARR SIC 1200V 30A TO247-3
  • Series:-
  • Mfr:Inventchip
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):30A (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 20 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:100 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for IV1D12020T3

IV1D12020T3

Diode Arrays Overview

The IV1D12020T3 is a Silicon Carbide (SiC) Schottky diode array manufactured by Inventchip. It features a TO-247-3 package and contains one pair of common cathode diodes. The device supports a maximum repetitive peak reverse voltage of 1200V and an average forward rectified current of 30A. It operates within a junction temperature range of -55°C to +175°C, with a specified reverse leakage current of 5µA at 1.2kV.

Diode Arrays Feature Summary

  • Utilizes Silicon Carbide material for high-temperature stability and low switching losses
  • Configured as a single pair of common cathode diodes in a through-hole package
  • Designed for high-voltage applications requiring robust thermal performance

Diode Arrays Applications

  • High-frequency power conversion circuits
  • Industrial motor drive systems
  • Uninterruptible power supply (UPS) units

Diode Arrays Procurement Notes

Verify the specific datasheet version from Inventchip to confirm electrical characteristics and mechanical dimensions. Ensure compatibility with TO-247-3 mounting requirements. Cross-reference pinout configurations against official documentation before integration into PCB designs to prevent circuit malfunction.

Diode Arrays Selection Notes

Select this component for applications demanding high voltage blocking capabilities and efficient heat dissipation. The common cathode configuration simplifies circuit topology for specific rectification needs. Evaluate thermal management solutions to maintain junction temperatures within the specified operational limits during continuous operation.

Diode Arrays Part Context

Inventchip specializes in advanced Silicon Carbide power devices and IC solutions. The IV1D12020T3 belongs to their SiC Schottky diode series, designed to replace traditional silicon components in high-efficiency power electronics. This product line supports modern energy conversion standards.

Diode Arrays Replacement Considerations

Consult official Inventchip documentation for verified substitute part numbers. Direct replacements must match the 1200V rating, 30A current capacity, and TO-247-3 package form factor to ensure functional equivalence.

IV1D12020T3IV1D12020T3
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