IV1Q12050T3

$11.81

Description：SIC MOSFET, 1200V 50MOHM, TO-247
Series：-
Mfr：Inventchip
Package：Tube

SKU:fca9c7577130 Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV1Q12050T3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is SIC MOSFET, 1200V 50MOHM, TO-247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV1Q12050T3

Description：SIC MOSFET, 1200V 50MOHM, TO-247
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：65mOhm @ 20A, 20V
Vgs(th) (Max) @ Id：3.2V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2770 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：327W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IV1Q12050T3

IV1Q12050T3

Single FETs, MOSFETs Overview

The IV1Q12050T3 is a Silicon Carbide (SiC) MOSFET manufactured by Inventchip Technology. It features an N-channel configuration housed in a TO-247 package. The device supports a drain-source voltage of 1.2 kV and a continuous drain current of 58 A. Key electrical parameters include a maximum on-resistance of 50 mΩ at 20 V gate drive, a typical gate charge of 120 nC, and a threshold voltage of 3.2 V. It operates within a junction temperature range of -55 °C to 175 °C with a power dissipation rating of 344 W.

Single FETs, MOSFETs Feature Summary

Utilizes Silicon Carbide semiconductor technology for high-efficiency power switching.

Single FETs, MOSFETs Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'T3' against official Inventchip documentation to confirm pinout and marking consistency. Ensure the selected variant matches the required thermal and electrical specifications for the target application design.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage handling and low conduction losses. Evaluate the thermal management requirements based on the 344 W power dissipation rating and the 175 °C maximum junction temperature limit.

Single FETs, MOSFETs Part Context

Inventchip Technology specializes in Silicon Carbide power devices and gate driver ICs. This product belongs to their SiC MOSFET portfolio, designed for advanced power electronics applications requiring robust performance under high-stress conditions.