IV1Q12080T3Z

Single FETs, MOSFETs Overview

The Inventchip IV1Q12080T3Z is a 1200V Silicon Carbide (SiC) MOSFET designed for high-power applications. It features an on-resistance of 80mΩ at VGS=20V and ID=10A, with a continuous drain current of 42A at TC=25°C. The device supports a maximum junction temperature of 175°C and operates within a -55°C to 175°C range. Key electrical parameters include a total gate charge of 76nC, input capacitance of 1680pF, and reverse recovery time of 40ns. Packaged in TO-247-3, it meets AEC-Q101 automotive qualification standards.

Single FETs, MOSFETs Feature Summary

• High blocking voltage combined with low on-resistance
• Fast switching capability with low capacitance
• Robust intrinsic body diode performance
• Qualified under AEC-Q101 automotive standards

Single FETs, MOSFETs Applications

• On-board chargers
• Automotive compressor inverters
• Automotive DC/DC converters
• Solar inverters
• Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values. Confirm that operating conditions remain within the absolute maximum ratings defined in the component specifications.

Single FETs, MOSFETs Selection Notes

Select this component for systems requiring high efficiency and elevated temperature operation. Evaluate the thermal impedance characteristics to ensure adequate heat dissipation. Consider the gate drive requirements based on the specified threshold voltage and total gate charge parameters for optimal switching performance.

Single FETs, MOSFETs Part Context

This SiC MOSFET belongs to the high-voltage power semiconductor category, specifically engineered for automotive and industrial environments. It utilizes silicon carbide technology to achieve superior thermal stability and switching speeds compared to traditional silicon devices. The TO-247-3 package facilitates efficient mounting and thermal transfer.

Single FETs, MOSFETs Replacement Considerations

Consult official InventChip documentation for verified substitute part numbers. Cross-reference pinouts and thermal characteristics when evaluating alternatives.