IV1Q12160T3

$6.04

Description：SIC MOSFET, 1200V 160MOHM, TO247
Series：-
Mfr：Inventchip
Package：Tube

SKU:9e118c2ee36e Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV1Q12160T3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is SIC MOSFET, 1200V 160MOHM, TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV1Q12160T3

Description：SIC MOSFET, 1200V 160MOHM, TO247
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：195mOhm @ 10A, 20V
Vgs(th) (Max) @ Id：5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs：43 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：895 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：134W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IV1Q12160T3

IV1Q12160T3

Single FETs, MOSFETs Overview

The IV1Q12160T3 is a Silicon Carbide (SiC) MOSFET from Inventchip, housed in a TO-247-3 package. It features a 1200V drain-source voltage rating and a maximum on-resistance of 195mΩ at VGS=20V and ID=10A. The device supports a continuous drain current of 19A at 25°C case temperature and handles a pulsed current of 48A. Key electrical parameters include a total gate charge of 43nC, input capacitance of 895pF, and a recommended turn-on voltage of 20V. It operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

High blocking voltage combined with low on-resistance for efficient power handling.
Fast switching capabilities supported by low capacitance values.
Robust intrinsic body diode with very fast reverse recovery characteristics.
High operating junction temperature capability up to 175°C.

Single FETs, MOSFETs Applications

Solar inverters
Uninterruptible Power Supplies (UPS)
Motor drivers
High voltage DC/DC converters
Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T3 against the manufacturer's official documentation to ensure correct pinout and thermal specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration. Check for any recent revisions to the datasheet that may affect absolute maximum ratings or thermal resistance values. Ensure sourcing channels are authorized to guarantee component authenticity and traceability.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low conduction losses and fast switching speeds. Evaluate thermal management needs based on the 1.122 °C/W junction-to-case thermal resistance. Consider the 19A continuous current limit at 25°C case temperature when designing heat sinks. Verify that the gate drive voltage aligns with the recommended 20V turn-on specification for optimal performance.

Single FETs, MOSFETs Part Context

This SiC MOSFET belongs to Inventchip's discrete semiconductor product line, focusing on silicon carbide power devices. The company specializes in developing high-performance power electronics components. The IV1Q series utilizes advanced SiC technology to achieve superior efficiency compared to traditional silicon-based alternatives in similar voltage classes.

Single FETs, MOSFETs Replacement Considerations

Consult official Inventchip documentation for confirmed substitute part numbers. Cross-reference pinouts and thermal characteristics carefully when considering alternative manufacturers' equivalents.