IV1Q12160T4

Single FETs, MOSFETs Overview

The IV1Q12160T4 is a Silicon Carbide (SiC) MOSFET manufactured by Inventchip Technology. It features an N-channel configuration with a drain-source voltage rating of 1200V and a maximum on-resistance of 160mΩ at 25°C. The device supports a continuous drain current of 20A at case temperature and operates within a junction temperature range of -55°C to +175°C. Packaged in a TO-24-7 format, it utilizes a gate threshold voltage of 2.9V @ 1.9mA and a maximum gate charge of 43nC @ 20V.

Single FETs, MOSFETs Feature Summary

• High blocking voltage capability combined with low on-resistance for efficient power handling
• Fast switching characteristics enabled by low capacitance values
• Robust intrinsic body diode performance supporting rapid transitions
• Kelvin gate connection facilitating relaxed driver circuit design

Single FETs, MOSFETs Applications

• High-frequency power conversion systems
• Industrial motor drives requiring high thermal stability
• Automotive power electronics applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant and datasheet revision before ordering, as Inventchip produces multiple SiC MOSFETs with similar naming conventions. Confirm that the TO-24-7 footprint matches your PCB layout requirements. Ensure compatibility with the specified 20V gate drive limits and check for any automotive qualification suffixes if used in vehicle systems. Cross-reference the manufacturer part number directly with official Inventchip documentation to avoid substitution errors.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation and low conduction losses. The Kelvin source terminal simplifies gate drive implementation compared to standard four-terminal packages. Consider the 175°C junction temperature limit for high-temperature environments. Evaluate the 160mΩ on-resistance against thermal management capabilities to ensure safe operating area compliance under peak load conditions.

Single FETs, MOSFETs Part Context

This device belongs to Inventchip's Silicon Carbide MOSFET portfolio, which includes various voltage ratings and package types. The company manufactures these devices using its own IATF 16949-certified wafer fabrication facility. The IV1Q series is designed to replace traditional silicon counterparts in high-efficiency applications, offering superior thermal performance and switching speed.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters carefully when considering alternative SiC MOSFETs from other manufacturers.