IV1Q12750O3

$4.26

Description：SIC MOSFET, 1200V 750MOHM, TO220
Series：-
Mfr：Inventchip
Package：Tube

SKU:5936ff402a30 Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV1Q12750O3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is SIC MOSFET, 1200V 750MOHM, TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV1Q12750O3

Description：SIC MOSFET, 1200V 750MOHM, TO220
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：6.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：900mOhm @ 1.5A, 20V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：15.8 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：260 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：66.9W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IV1Q12750O3

IV1Q12750O3

Single FETs, MOSFETs Overview

The IV1Q12750O3 is a Silicon Carbide (SiC) MOSFET manufactured by Inventchip, designed for high-voltage power switching applications. It features a 1200V drain-source voltage rating and operates with a recommended turn-on gate-source voltage of 20V. The device exhibits a maximum static on-resistance of 900mΩ at 25°C and 1070mΩ at 175°C when tested at 1.5A. Key electrical parameters include a total gate charge of 15.8nC, input capacitance of 260pF, and continuous drain current ratings of 6.4A at 25°C case temperature. The component supports an operating junction temperature range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

High blocking voltage capability suitable for demanding power environments
Fast switching performance characterized by low internal capacitances
Robust intrinsic body diode with rapid reverse recovery characteristics
Extended thermal stability allowing operation up to 175°C junction temperature

Single FETs, MOSFETs Applications

Solar inverters
Uninterruptible Power Supplies (UPS)
High voltage DC/DC converters
Switch mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the TO-220-3 package dimensions align with your PCB footprint requirements. Ensure thermal management solutions account for the specified thermal resistance values under actual operating conditions. Cross-reference absolute maximum ratings with system stress limits to prevent device failure during transient events.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency in medium-power conversion stages where low switching losses are critical. The SiC technology offers superior thermal performance compared to traditional silicon devices. Evaluate the gate drive requirements carefully, as the device specifies a recommended turn-on voltage of 20V and a negative turn-off voltage between -3.5V and -2V for optimal performance and reliability.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's portfolio of Silicon Carbide power devices, which focuses on high-performance discrete semiconductors. The company specializes in developing SiC MOSFETs and related power management components. The IV1Q12750O3 represents their offering in the 1200V class, targeting industrial and renewable energy markets that demand robust and efficient power switching solutions.