IV2Q06025D7Z

$10.40

Description：GEN 2, SIC MOSFET, 650V 25MOHM,
Series：-
Mfr：Inventchip
Package：Tube

SKU:b2c618a6d2cf Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV2Q06025D7Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is GEN 2, SIC MOSFET, 650V 25MOHM,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV2Q06025D7Z

Description：GEN 2, SIC MOSFET, 650V 25MOHM,
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：111A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：33mOhm @ 40A, 18V
Vgs(th) (Max) @ Id：4.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs：125 nC @ 18 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：3090 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：600W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-263-7
Package / Case：TO-263-7

Single FETs, MOSFETs datasheet and documents for IV2Q06025D7Z

IV2Q06025D7Z

Single FETs, MOSFETs Overview

The IV2Q06025D7Z is a second-generation silicon carbide (SiC) MOSFET from Inventchip, designed for automotive and industrial power applications. It features a 650V drain-source voltage rating and a maximum continuous drain current of 111A at 25°C case temperature. The device exhibits a typical static on-resistance of 25mΩ at VGS=18V and ID=40A. Key electrical parameters include a total gate charge of 125nC, input capacitance of 3090pF, and turn-on switching energy of 271μJ under standard test conditions. It operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Second-generation SiC MOSFET technology optimized for +15V to +18V gate drive operation
High blocking voltage combined with low on-resistance for efficient power conversion
Ultra-fast and robust intrinsic body diode characteristics
Kelvin gate input configuration to simplify driver circuit design

Single FETs, MOSFETs Applications

On-board chargers (OBC)
DC-DC converters
Solar boosters
AC/DC power supplies
Energy storage converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix D7Z corresponds to the TO-263-7 package variant when sourcing. Confirm AEC-Q101 qualification status is required for your specific automotive application context. Ensure thermal management solutions support the specified junction temperature limits and power dissipation ratings during system integration.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power stages requiring fast switching speeds and high thermal stability. The Kelvin source connection aids in minimizing noise coupling during high-speed transitions. Consider the gate charge and resistance values when designing the gate driver loop to optimize switching losses and electromagnetic interference performance.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's Gen2 automotive-grade SiC MOSFET lineup. It utilizes advanced silicon carbide material properties to achieve superior performance compared to traditional silicon devices. The TO-263-7 package provides a compact form factor suitable for surface-mount assembly in dense power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Evaluate other 650V SiC MOSFETs with similar RDS(on), Qg, and package dimensions if cross-referencing is necessary.