IV2Q06040T4Z

$8.93

Description：GEN 2, SIC MOSFET, 650V 40MOHM,
Series：-
Mfr：Inventchip
Package：Tube

SKU:8c71c08b9f07 Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV2Q06040T4Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is GEN 2, SIC MOSFET, 650V 40MOHM,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV2Q06040T4Z

Description：GEN 2, SIC MOSFET, 650V 40MOHM,
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：53mOhm @ 20A, 18V
Vgs(th) (Max) @ Id：4.5V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs：94.7 nC @ 18 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：249W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for IV2Q06040T4Z

IV2Q06040T4Z

Single FETs, MOSFETs Overview

The IV2Q06040T4Z is a 650V automotive-grade Silicon Carbide (SiC) MOSFET from Inventchip, utilizing second-generation technology. It features a maximum drain-source voltage of 650V and a static on-resistance of 40mΩ at VGS=18V and TC=25°C. The device supports continuous drain currents of 60A at 25°C and 43A at 100°C case temperature. It operates with junction temperatures up to 175°C and includes Kelvin gate connections for optimized driver circuit design.

Single FETs, MOSFETs Feature Summary

Second-generation SiC MOSFET technology supporting +15V to +18V gate drive
High blocking voltage combined with low on-resistance
Ultra-fast and robust intrinsic body diode characteristics
Kelvin gate input configuration to ease driver circuit design

Single FETs, MOSFETs Applications

Electric vehicle chargers
On-board chargers (OBCs)
Solar boosters
Automotive compressor inverters
AC/DC power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision date against the manufacturer's official records before finalizing procurement decisions. Confirm that the TO-247-4 package dimensions align precisely with your PCB footprint requirements. Ensure that thermal management solutions are designed to accommodate the specified junction-to-case thermal resistance values under expected operating loads.

Single FETs, MOSFETs Selection Notes

Select this component when high-efficiency switching and robust reverse conduction are required in automotive or industrial environments. The AEC-Q101 qualification ensures suitability for demanding automotive applications. Consider the 175°C operating capability for high-temperature designs where silicon-based alternatives may face limitations.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip’s Gen2 SiC MOSFET lineup, designed specifically for high-power density applications. The TO-247-4 package provides efficient thermal dissipation through the dedicated drain tab. The inclusion of a fourth pin facilitates the Kelvin source connection, improving switching performance by minimizing noise coupling in the gate drive loop.