IV2Q06060T4Z

$7.64

Description：GEN 2, SIC MOSFET, 650V 60MOHM,
Series：-
Mfr：Inventchip
Package：Tube

SKU:8b24d1b060cb Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV2Q06060T4Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is GEN 2, SIC MOSFET, 650V 60MOHM,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV2Q06060T4Z

Description：GEN 2, SIC MOSFET, 650V 60MOHM,
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：53mOhm @ 15A, 18V
Vgs(th) (Max) @ Id：4.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 18 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：1218 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：174W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for IV2Q06060T4Z

IV2Q06060T4Z

Single FETs, MOSFETs Overview

The IV2Q06060T4Z is a second-generation automotive-grade Silicon Carbide (SiC) MOSFET from Inventchip Technology, housed in a TO-247-4 package. It features a 650V drain-source voltage rating and a maximum continuous drain current of 43A at 25°C case temperature. The device exhibits a typical static on-resistance of 60mΩ at VGS=18V and ID=15A. Key electrical parameters include a total gate charge of 64nC, input capacitance of 1218pF, and reverse recovery charge of 122.5nC. It supports an operating junction temperature range of -55°C to 175°C and is AEC-Q101 qualified.

Single FETs, MOSFETs Feature Summary

Second-generation SiC MOSFET technology optimized for +15V to +18V gate drive
High blocking voltage combined with low on-resistance for efficient power handling
Ultra-fast and robust intrinsic body diode characteristics
Kelvin gate input configuration to simplify driver circuit design

Single FETs, MOSFETs Applications

Electric vehicle chargers and On-Board Chargers (OBCs)
Solar boosters
Automotive compressor inverters
AC/DC power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T4Z corresponds to the TO-247-4 package variant when sourcing. Confirm that the component meets AEC-Q101 qualification requirements for your specific automotive application standards. Ensure thermal management solutions are compatible with the specified junction-to-case thermal resistance values provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power conversion applications requiring wide bandgap semiconductor performance. The Kelvin source pin facilitates precise gate control, reducing switching losses. Consider the 175°C junction temperature capability for high-temperature environments. Evaluate the low output capacitance and stored energy for high-frequency operation suitability.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's Gen2 Automotive SiC MOSFET lineup, designed to replace silicon-based counterparts in high-power density systems. The TO-247-4 package provides robust mechanical stability and thermal dissipation capabilities suitable for industrial and automotive modules. It represents the manufacturer's focus on Silicon Carbide power devices and gate driver integration.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 650V SiC MOSFETs in the TO-247-4 package if supply constraints exist. Verify pinout compatibility, specifically the presence of the Kelvin source terminal, before substituting with non-Kelvin variants. Check that alternative devices meet the same AEC-Q101 qualification level.