IV2Q12080D7Z

Single FETs, MOSFETs Overview

The IV2Q12080D7Z is a second-generation Silicon Carbide (SiC) MOSFET from Inventchip Technology, designed for high-power applications. It features an N-channel configuration with a drain-source voltage (VDS) of 1200 V and a maximum on-resistance (Rds(on)) of 80 mΩ at 25°C. The device supports a continuous drain current (Id) of 41 A at case temperature (Tc). It is housed in a through-hole package rated for 250 W power dissipation at Tc. This component holds AEC-Q101 qualification, indicating suitability for automotive environments.

Single FETs, MOSFETs Feature Summary

• Second-generation Silicon Carbide technology for enhanced efficiency
• AEC-Q101 qualified for automotive reliability standards
• Low on-resistance to minimize conduction losses
• Through-hole packaging for robust thermal management

Single FETs, MOSFETs Applications

• Automotive motor drivers
• High-voltage power conversion systems
• Industrial power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific revision suffix and packaging type against the manufacturer's latest datasheet before ordering. Confirm that the AEC-Q101 certification status remains valid for the specific batch intended for automotive use. Ensure thermal design accounts for the 250W rating at case temperature. Cross-reference the part number with authorized distributors to avoid counterfeit components.

Single FETs, MOSFETs Selection Notes

Select this component when a 1200V SiC MOSFET with low Rds(on) is required for automotive or industrial applications. Compare the 80mΩ resistance and 41A current rating against system requirements. Consider the through-hole package for assembly constraints. Evaluate thermal performance needs relative to the 250W dissipation capability. Ensure compatibility with gate drive voltages typical for SiC devices.

Single FETs, MOSFETs Part Context

Inventchip Technology specializes in Silicon Carbide power devices and ICs. The IV2Q series represents their second-generation SiC MOSFET offerings. This model targets the automotive sector, leveraging AEC-Q101 qualification. The company operates its own IATF 16949-certified wafer fab in Zhejiang Province, ensuring control over manufacturing quality for these high-reliability components.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the IV2Q family with different Rds(on) values. Verify pinout compatibility with existing PCB layouts. Ensure replacement parts also hold AEC-Q101 qualification if used in automotive contexts. Confirm thermal characteristics match the original design specifications.