IV2Q12080T4Z

Single FETs, MOSFETs Overview

The IV2Q12080T4Z is a second-generation automotive-grade Silicon Carbide (SiC) MOSFET manufactured by Inventchip. It features a 1200V drain-source voltage rating and an on-resistance of 80mΩ at 25°C. The device supports a continuous drain current of 41A at 25°C case temperature, with a maximum transient gate voltage range of -10V to 23V. Designed for high-speed switching, it includes Kelvin gate terminals to simplify driver circuit design. The component operates within a junction temperature range of -55°C to 175°C and is housed in a TO-247-4 package.

Single FETs, MOSFETs Feature Summary

• Second-generation SiC MOSFET technology optimized for +15V to +18V gate drive operation
• AEC-Q101 qualified for automotive reliability standards
• Ultra-fast and robust intrinsic body diode characteristics
• Kelvin gate input configuration to ease driver circuit design

Single FETs, MOSFETs Applications

• Electric vehicle chargers and On-Board Chargers (OBCs)
• Solar boosters
• Automotive compressor inverters
• AC/DC power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T4Z against the manufacturer's official documentation to ensure correct pinout and thermal specifications. Confirm that the required gate drive voltage aligns with the recommended 15V to 18V range for optimal performance. Ensure the application environment respects the absolute maximum ratings, particularly the transient VGS limits and junction temperature constraints defined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring AEC-Q101 qualification and low conduction losses at 1200V. The TO-247-4 package facilitates efficient heat dissipation for high-power applications. Consider the 80mΩ on-resistance for efficiency calculations at 25°C, noting that resistance increases significantly at elevated temperatures up to 175°C. The Kelvin source connection requires careful PCB layout to minimize noise coupling in the gate loop.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's Gen2 Automotive SiC MOSFET portfolio, designed to replace silicon-based solutions in high-efficiency power conversion. It targets the growing demand for reliable power semiconductors in electric mobility and renewable energy infrastructure. The device integrates advanced cell architecture to achieve superior switching speeds and reduced reverse recovery charge compared to previous generations.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 1200V rating, TO-247-4 package, and AEC-Q101 qualification. Verify that alternative components support the same recommended gate drive voltage window (+15V to +18V) and have comparable on-resistance and thermal resistance values to maintain system performance without redesigning the thermal management or gate driver circuits.