IV2Q171R0T3

$4.79

Description：GEN2, SIC MOSFET, 1700V 1000MOHM
Series：-
Mfr：Inventchip
Package：Tube

SKU:6a55f8f8f95a Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV2Q171R0T3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is GEN2, SIC MOSFET, 1700V 1000MOHM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV2Q171R0T3

Description：GEN2, SIC MOSFET, 1700V 1000MOHM
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：910mOhm @ 1A, 18V
Vgs(th) (Max) @ Id：4.5V @ 380uA
Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 18 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：285 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：86W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IV2Q171R0T3

IV2Q171R0T3

Single FETs, MOSFETs Overview

The Inventchip IV2Q171R0T3 is a second-generation Silicon Carbide (SiC) MOSFET designed for high-voltage power conversion. It features a 1700V drain-source voltage rating and a maximum operating junction temperature of 175°C. The device utilizes a TO-247-3 package with a static on-resistance of 1000mΩ at VGS=18V. Key electrical parameters include a continuous drain current of 6.7A, a pulsed drain current of 16.7A, and low switching energies such as 73.9μJ turn-on energy at 25°C. It incorporates an ultra-fast intrinsic body diode with a reverse recovery time of 33.5ns.

Single FETs, MOSFETs Feature Summary

Second-generation SiC MOSFET technology optimized for +15V to +18V gate drive operation.
High blocking voltage combined with low on-resistance for efficient power handling.
Ultra-fast and robust intrinsic body diode characteristics suitable for hard-switching applications.
Capable of 175°C operating junction temperature for enhanced thermal performance.

Single FETs, MOSFETs Applications

Solar inverters
Auxiliary power supplies
Switch mode power supplies
Smart meters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct pinout and packaging configuration. Confirm that the required gate drive voltage aligns with the recommended +15V to +18V range specified in the datasheet. Ensure thermal management solutions support the 175°C junction temperature limit and the specified thermal resistance values during system integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage isolation up to 1700V with minimal conduction losses. The TO-247-3 package facilitates effective heat dissipation for medium-power applications. Consider the low gate charge and capacitance values when designing gate driver circuits to optimize switching speed and minimize electromagnetic interference in high-frequency power supply topologies.

Single FETs, MOSFETs Part Context

This device belongs to the Inventchip family of wide-bandgap semiconductor components. It represents an advancement in silicon carbide technology, offering superior performance compared to traditional silicon MOSFETs in high-voltage environments. The product line targets industrial and renewable energy sectors demanding high efficiency and reliability under extreme thermal conditions.

Single FETs, MOSFETs Replacement Considerations

Consult official Inventchip documentation for verified cross-reference part numbers. Ensure any substitute maintains the 1700V rating, TO-247-3 footprint, and compatible gate threshold specifications to guarantee circuit functionality without redesign.