IV3Q12035T4Z

$8.52

Description：GEN3, SIC MOSFET, 1200V 35MOHM,
Series：-
Mfr：Inventchip
Package：Tube

SKU:4ce0a4140d7b Category: Single FETs, MOSFETs Brand: Inventchip

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IV3Q12035T4Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is GEN3, SIC MOSFET, 1200V 35MOHM,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV3Q12035T4Z

Description：GEN3, SIC MOSFET, 1200V 35MOHM,
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：46mOhm @ 30A, 18V
Vgs(th) (Max) @ Id：4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs：135 nC @ 18 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：3000 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：395W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for IV3Q12035T4Z

IV3Q12035T4Z

Single FETs, MOSFETs Overview

The IV3Q12035T4Z is a 1200 V Silicon Carbide (SiC) MOSFET developed by Inventchip based on their third-generation process platform. It features a planar gate structure with a specific cell pitch reduction of over 20% compared to previous generations. The device achieves a specific on-resistance (Rsp) of 2.5 mΩ*cm² and exhibits a reduced temperature coefficient for Rds(on). At Vgs=15V, the resistance at 175°C is 1.42 times that at 25°C; at Vgs=18V, it is 1.65 times. Switching losses are reduced by more than 30% relative to second-generation products. It has passed AEC-Q101 automotive reliability certification.

Single FETs, MOSFETs Feature Summary

Third-generation planar gate SiC MOSFET technology
Reduced specific on-resistance of 2.5 mΩ*cm²
Lower switching losses compared to second-generation devices
Automotive-grade reliability certified under AEC-Q101

Single FETs, MOSFETs Applications

On-board chargers (OBC)
DC-DC converters
Traction inverters

Single FETs, MOSFETs Procurement Notes

Verify the component against official Inventchip datasheets to confirm pinout compatibility and thermal characteristics. Ensure the supplier provides traceability documentation required for automotive applications. Cross-reference the specific suffix 'Z' with manufacturer specifications to validate package type and marking details before integration into production designs.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power conversion systems requiring robust thermal performance and low conduction losses. The reduced temperature coefficient supports stable operation at elevated junction temperatures. Consider the 30% switching loss improvement for applications demanding higher frequency operation or reduced cooling requirements compared to older generation SiC devices.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's third-generation 1200 V SiC MOSFET lineup, manufactured using a dedicated automotive-grade silicon carbide wafer facility in Yiwu. The product line includes variants such as IV3Q12013BA and IV3Q12013BD, targeting electric vehicle powertrains. The series represents a significant advancement in cell density and thermal stability over prior iterations.