IXFA6N120P-TRL

$4.48

Description：MOSFET N-CH 1200V 6A TO263
Series：HiPerFET™, Polar
Mfr：Littelfuse Inc.
Package：Tape & Reel (TR)

SKU:e08921643989 Category: Single FETs, MOSFETs Brand: Littelfuse Inc.

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Product introduction

IXFA6N120P-TRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 1200V 6A TO263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFA6N120P-TRL

Description：MOSFET N-CH 1200V 6A TO263
Series：HiPerFET™, Polar
Mfr：Littelfuse Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：92 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2830 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：250W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263AA (IXFA)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IXFA6N120P-TRL

IXFA6N120P-TRL

Single FETs, MOSFETs Overview

The Littelfuse IXFA6N120P-TRL is a single N-channel Power MOSFET from the Polar HiPerFET series, housed in a TO-263 (D2PAK) surface-mount package. It features a drain-source breakdown voltage of 1200 V and a continuous drain current of 6 A. The device exhibits a maximum on-resistance of 2.4 Ohms at 500 mA and 10 V gate drive. It operates with a gate-source voltage range of ±30 V and supports junction temperatures up to +175 °C. The component utilizes trench technology for enhanced performance.

Single FETs, MOSFETs Feature Summary

Incorporates Polar HiPerFET technology combining standard family strengths with optimized body diode characteristics
Features a significantly reduced reverse recovery time (trr) for the internal body diode
Utilizes trench MOS architecture for improved switching efficiency

Single FETs, MOSFETs Applications

High-voltage DC-DC converter circuits
Industrial motor drive systems
Uninterruptible power supply (UPS) topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TRL' indicates tape-and-reel packaging configuration against the manufacturer's official datasheet. Confirm that the TO-263 pinout matches the target PCB footprint design. Ensure thermal management requirements align with the specified power dissipation limits under intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high blocking voltage capability in a compact surface-mount form factor. The low reverse recovery charge of the body diode makes it suitable for hard-switching resonant converters. Evaluate thermal resistance parameters to ensure adequate heat sinking for the 6 A current rating.

Single FETs, MOSFETs Part Context

This part belongs to the Littelfuse Polar HiPerFET series, designed for high-voltage power switching applications. The series integrates advanced trench MOS technology to deliver superior performance compared to conventional planar devices. The IXFA designation identifies the specific package style within the product line.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 1200 V rating, N-channel configuration, and TO-263 package. Verify equivalent on-resistance and reverse recovery characteristics to maintain circuit performance integrity during replacement.